Yuli Pang , Xu Lu , Yunxiang Ma , Min Sun , Z.-Y. Cheng
{"title":"压力测量用压电膜传感器:理论与实验","authors":"Yuli Pang , Xu Lu , Yunxiang Ma , Min Sun , Z.-Y. Cheng","doi":"10.1016/j.sna.2025.117027","DOIUrl":null,"url":null,"abstract":"<div><div>This study presents a piezoelectric membrane pressure sensor by monitoring the resonant frequency shift (Δ<em>f</em>) that changes with the pressure difference (Δ<em>P</em>) across the membrane. Theoretical and experimental investigations reveal two critical pressure thresholds (Δ<em>P</em><sub><em>α</em></sub> and Δ<em>P</em><sub><em>β</em></sub>) determined by the competition between flexural rigidity (<em>D</em>) and tensile stress (<em>T</em>). Accordingly, three distinct operational ranges are defined: (1) a <em>D</em>-dominated range below Δ<em>P</em><sub><em>α</em></sub>, (2) a <em>T</em>-dominated range above Δ<em>P</em><sub><em>β</em></sub>, and (3) a transitional range with resonant peak perturbation between Δ<em>P</em><sub><em>α</em></sub> and Δ<em>P</em><sub><em>β</em></sub>. The sensor demonstrates effective pressure measurement capability in both <em>D</em>- and <em>T</em>-dominated ranges, with an operational upper limit determined by the maximum tolerable pressure difference (Δ<em>Pₘₐₓ</em>). The sensitivity (<em>S</em><sub>Δ<em>P</em></sub>) exhibits unique mode- and operational range-dependent characteristics: higher resonant modes exhibit higher sensitivity; <em>S</em><sub>Δ<em>P</em></sub> remains size-independent and exhibits relatively higher values below Δ<em>P</em><sub><em>α</em></sub>, but becomes size-dependent with reduced sensitivity above Δ<em>P</em><sub><em>β</em></sub>. These performance characteristics are analytically described using fundamental membrane parameters, including geometry (size <em>a</em>, thickness <em>t</em>) and material properties (Young's modulus <em>E</em>, density <em>ρ</em>). The dual-threshold behaviors and sensitivity characterizations provide comprehensive guidelines for design and optimization of piezoelectric membrane sensors in pressure measurement applications.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"395 ","pages":"Article 117027"},"PeriodicalIF":4.9000,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Piezoelectric membrane sensor for pressure measurement: Theory and experiment\",\"authors\":\"Yuli Pang , Xu Lu , Yunxiang Ma , Min Sun , Z.-Y. Cheng\",\"doi\":\"10.1016/j.sna.2025.117027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This study presents a piezoelectric membrane pressure sensor by monitoring the resonant frequency shift (Δ<em>f</em>) that changes with the pressure difference (Δ<em>P</em>) across the membrane. Theoretical and experimental investigations reveal two critical pressure thresholds (Δ<em>P</em><sub><em>α</em></sub> and Δ<em>P</em><sub><em>β</em></sub>) determined by the competition between flexural rigidity (<em>D</em>) and tensile stress (<em>T</em>). Accordingly, three distinct operational ranges are defined: (1) a <em>D</em>-dominated range below Δ<em>P</em><sub><em>α</em></sub>, (2) a <em>T</em>-dominated range above Δ<em>P</em><sub><em>β</em></sub>, and (3) a transitional range with resonant peak perturbation between Δ<em>P</em><sub><em>α</em></sub> and Δ<em>P</em><sub><em>β</em></sub>. The sensor demonstrates effective pressure measurement capability in both <em>D</em>- and <em>T</em>-dominated ranges, with an operational upper limit determined by the maximum tolerable pressure difference (Δ<em>Pₘₐₓ</em>). The sensitivity (<em>S</em><sub>Δ<em>P</em></sub>) exhibits unique mode- and operational range-dependent characteristics: higher resonant modes exhibit higher sensitivity; <em>S</em><sub>Δ<em>P</em></sub> remains size-independent and exhibits relatively higher values below Δ<em>P</em><sub><em>α</em></sub>, but becomes size-dependent with reduced sensitivity above Δ<em>P</em><sub><em>β</em></sub>. These performance characteristics are analytically described using fundamental membrane parameters, including geometry (size <em>a</em>, thickness <em>t</em>) and material properties (Young's modulus <em>E</em>, density <em>ρ</em>). The dual-threshold behaviors and sensitivity characterizations provide comprehensive guidelines for design and optimization of piezoelectric membrane sensors in pressure measurement applications.</div></div>\",\"PeriodicalId\":21689,\"journal\":{\"name\":\"Sensors and Actuators A-physical\",\"volume\":\"395 \",\"pages\":\"Article 117027\"},\"PeriodicalIF\":4.9000,\"publicationDate\":\"2025-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensors and Actuators A-physical\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0924424725008337\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424725008337","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Piezoelectric membrane sensor for pressure measurement: Theory and experiment
This study presents a piezoelectric membrane pressure sensor by monitoring the resonant frequency shift (Δf) that changes with the pressure difference (ΔP) across the membrane. Theoretical and experimental investigations reveal two critical pressure thresholds (ΔPα and ΔPβ) determined by the competition between flexural rigidity (D) and tensile stress (T). Accordingly, three distinct operational ranges are defined: (1) a D-dominated range below ΔPα, (2) a T-dominated range above ΔPβ, and (3) a transitional range with resonant peak perturbation between ΔPα and ΔPβ. The sensor demonstrates effective pressure measurement capability in both D- and T-dominated ranges, with an operational upper limit determined by the maximum tolerable pressure difference (ΔPₘₐₓ). The sensitivity (SΔP) exhibits unique mode- and operational range-dependent characteristics: higher resonant modes exhibit higher sensitivity; SΔP remains size-independent and exhibits relatively higher values below ΔPα, but becomes size-dependent with reduced sensitivity above ΔPβ. These performance characteristics are analytically described using fundamental membrane parameters, including geometry (size a, thickness t) and material properties (Young's modulus E, density ρ). The dual-threshold behaviors and sensitivity characterizations provide comprehensive guidelines for design and optimization of piezoelectric membrane sensors in pressure measurement applications.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...