一种增强抗噪性的超低电压保持SRAM单元

IF 2.4 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Katsutoshi Ito;Yusaku Shiotsu;Satoshi Sugahara
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引用次数: 0

摘要

提出了一种新的超低电压保持(ULVR) SRAM单元,它可以在超低电压$(V_{\math {UL}})$下显著提高ULVR模式的噪声余量(NM)。这个8T电池配置了新型的施密特触发(ST)逆变器,可以最大限度地提高电压转移特性(VTC)的滞后宽度。在开发电池的设计方法时,仔细考虑了各组成晶体管的工艺变化,优化设计的电池可以确保足够的NMs,满足所有工作模式下$6\sigma $的失效概率。特别是,对于$V_{\math} {UL}} {=} 0.2$ V的ULVR模式,所提出的8T电池比以前提出的各种低压电池具有更强的抗噪声能力。此外,所提出的8T单元即使在$V_{\ mathm {UL}} {=} 0.16$ V时也能保持稳定的数据保留,并且具有足够的抗噪性,满足$6\sigma $的失效概率。本文还开发了一个8kB的ULVR-SRAM宏,该宏配置了所提出的8t -cell阵列。使用ULVR模式,与传统的6T-SRAM宏的待机模式相比,宏的待机功耗可降低约93%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A New Ultralow-Voltage Retention SRAM Cell Enhancing Noise Immunity
A new ultralow-voltage retention (ULVR) SRAM cell is proposed, which can highly enhance the noise margin (NM) for the ULVR mode at ultralow voltages $(V_{\mathrm { UL}})$ . This 8T cell is configured with new-type Schmitt-trigger (ST) inverters that can nearly maximize the hysteresis width of the voltage transfer characteristics (VTC). The design methodology of the cell is developed with careful consideration for the process variation of the constituent transistors, and the optimally designed cell can ensure sufficient NMs that satisfy the $6\sigma $ failure probability for all the operating modes. In particular, for the ULVR mode at $V_{\mathrm { UL}} {=} 0.2$ V, the proposed 8T cell can exhibit much stronger noise immunity than previously proposed various low-voltage cells. In addition, the proposed 8T cell can achieve stable data retention even at $V_{\mathrm { UL}} {=} 0.16$ V with sufficient noise immunity satisfying the $6\sigma $ failure probability. An 8kB ULVR-SRAM macro configured with the proposed-8T-cell array is also developed. Using the ULVR mode, the macro can reduce the standby power by ~93% compared with the standby mode of a conventional 6T-SRAM macro.
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