Wei-Hao Huang;Cheng-Chun Chen;Ji-Yao Shan;Kai-Lun Chi;Tien-Chang Lu
{"title":"不同脉冲条件下多结VCSELs中多氧化层的影响","authors":"Wei-Hao Huang;Cheng-Chun Chen;Ji-Yao Shan;Kai-Lun Chi;Tien-Chang Lu","doi":"10.1109/JQE.2025.3593150","DOIUrl":null,"url":null,"abstract":"This report investigates 940 nm vertical-cavity surface-emitting lasers (VCSELs) with three-junction (3J) designs under various pulsed driving conditions, focusing on the influence of oxide layer configurations on electrical and optical performance. Heat accumulation is a critical issue in VCSEL operation; therefore, reducing pulse width effectively minimizes heat generation. This not only enhances the thermal characteristics of the devices but also suppresses lateral carrier diffusion—particularly important in longer resonant cavity structures such as multi-junction VCSELs. At room temperature, a 3J 940 nm VCSEL with a <inline-formula> <tex-math>$10\\mu $ </tex-math></inline-formula> m oxide aperture driven by 2 ns pulses achieved a slope efficiency (SE) of 3.2 W/A using a three-layer oxide structure, compared to 2.37 W/A for a single-layer oxide design. Both devices exhibited a red spectral shift of less than 1 nm, corresponding to a temperature rise below <inline-formula> <tex-math>$12~^{\\circ }$ </tex-math></inline-formula>C, indicating improved thermal management. Notably, a unique behavior was observed in the three-oxide-layer 3J VCSEL: as the injection current increased, the beam divergence angle decreased from 17° to 5°. These findings highlight the advantages of multi-junction VCSELs with optimized oxide designs, demonstrating their potential for future high-performance sensing applications.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-6"},"PeriodicalIF":2.1000,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of Multiple Oxide Layers in Multi-Junction VCSELs Under Different Pulse Conditions\",\"authors\":\"Wei-Hao Huang;Cheng-Chun Chen;Ji-Yao Shan;Kai-Lun Chi;Tien-Chang Lu\",\"doi\":\"10.1109/JQE.2025.3593150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This report investigates 940 nm vertical-cavity surface-emitting lasers (VCSELs) with three-junction (3J) designs under various pulsed driving conditions, focusing on the influence of oxide layer configurations on electrical and optical performance. Heat accumulation is a critical issue in VCSEL operation; therefore, reducing pulse width effectively minimizes heat generation. This not only enhances the thermal characteristics of the devices but also suppresses lateral carrier diffusion—particularly important in longer resonant cavity structures such as multi-junction VCSELs. At room temperature, a 3J 940 nm VCSEL with a <inline-formula> <tex-math>$10\\\\mu $ </tex-math></inline-formula> m oxide aperture driven by 2 ns pulses achieved a slope efficiency (SE) of 3.2 W/A using a three-layer oxide structure, compared to 2.37 W/A for a single-layer oxide design. Both devices exhibited a red spectral shift of less than 1 nm, corresponding to a temperature rise below <inline-formula> <tex-math>$12~^{\\\\circ }$ </tex-math></inline-formula>C, indicating improved thermal management. Notably, a unique behavior was observed in the three-oxide-layer 3J VCSEL: as the injection current increased, the beam divergence angle decreased from 17° to 5°. These findings highlight the advantages of multi-junction VCSELs with optimized oxide designs, demonstrating their potential for future high-performance sensing applications.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":\"61 5\",\"pages\":\"1-6\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2025-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11097300/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11097300/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effects of Multiple Oxide Layers in Multi-Junction VCSELs Under Different Pulse Conditions
This report investigates 940 nm vertical-cavity surface-emitting lasers (VCSELs) with three-junction (3J) designs under various pulsed driving conditions, focusing on the influence of oxide layer configurations on electrical and optical performance. Heat accumulation is a critical issue in VCSEL operation; therefore, reducing pulse width effectively minimizes heat generation. This not only enhances the thermal characteristics of the devices but also suppresses lateral carrier diffusion—particularly important in longer resonant cavity structures such as multi-junction VCSELs. At room temperature, a 3J 940 nm VCSEL with a $10\mu $ m oxide aperture driven by 2 ns pulses achieved a slope efficiency (SE) of 3.2 W/A using a three-layer oxide structure, compared to 2.37 W/A for a single-layer oxide design. Both devices exhibited a red spectral shift of less than 1 nm, corresponding to a temperature rise below $12~^{\circ }$ C, indicating improved thermal management. Notably, a unique behavior was observed in the three-oxide-layer 3J VCSEL: as the injection current increased, the beam divergence angle decreased from 17° to 5°. These findings highlight the advantages of multi-junction VCSELs with optimized oxide designs, demonstrating their potential for future high-performance sensing applications.
期刊介绍:
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.