氮化镓中快速重离子诱导的潜在径迹

IF 1.4 3区物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms Pub Date : 2025-09-04 DOI:10.1016/j.nimb.2025.165855

P.P. Hu , Z.N. Jin , L.J. Xu , S.X. Zhang , P.F. Zhai , J. Zeng , Z.Z. Li , X.Y. Yan , L. Cai , J. Liu

{"title":"氮化镓中快速重离子诱导的潜在径迹","authors":"P.P. Hu , Z.N. Jin , L.J. Xu , S.X. Zhang , P.F. Zhai , J. Zeng , Z.Z. Li , X.Y. Yan , L. Cai , J. Liu","doi":"10.1016/j.nimb.2025.165855","DOIUrl":null,"url":null,"abstract":"<div><div>The amorphous latent tracks in Gallium nitride (GaN) single crystal irradiated with different swift heavy ions (SHIs, <sup>129</sup>Xe, <sup>181</sup>Ta and <sup>209</sup>Bi ions) were investigated by transmission electron microscopy (TEM). TEM images showed that the average diameter of latent tracks increased from 1.6 to 4.5 nm with electronic energy loss values increasing from 23 to 46.9 keV/nm. The energy loss threshold for latent track formation in GaN was about 23 keV/nm for 4–17 MeV/u heavy ions concluded from experimental data. The annealing effect of exposuring latent tracks to electron beam was observed. It indicates that GaN crystals have strong recrystallization ability.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"568 ","pages":"Article 165855"},"PeriodicalIF":1.4000,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Latent tracks induced by swift heavy ions in Gallium nitride\",\"authors\":\"P.P. Hu , Z.N. Jin , L.J. Xu , S.X. Zhang , P.F. Zhai , J. Zeng , Z.Z. Li , X.Y. Yan , L. Cai , J. Liu\",\"doi\":\"10.1016/j.nimb.2025.165855\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The amorphous latent tracks in Gallium nitride (GaN) single crystal irradiated with different swift heavy ions (SHIs, <sup>129</sup>Xe, <sup>181</sup>Ta and <sup>209</sup>Bi ions) were investigated by transmission electron microscopy (TEM). TEM images showed that the average diameter of latent tracks increased from 1.6 to 4.5 nm with electronic energy loss values increasing from 23 to 46.9 keV/nm. The energy loss threshold for latent track formation in GaN was about 23 keV/nm for 4–17 MeV/u heavy ions concluded from experimental data. The annealing effect of exposuring latent tracks to electron beam was observed. It indicates that GaN crystals have strong recrystallization ability.</div></div>\",\"PeriodicalId\":19380,\"journal\":{\"name\":\"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms\",\"volume\":\"568 \",\"pages\":\"Article 165855\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0168583X25002459\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0168583X25002459","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}

引用次数: 0

摘要

用透射电镜（TEM）研究了不同快速重离子（SHIs、129Xe、181Ta和209Bi离子）辐照氮化镓（GaN）单晶时的非晶态潜迹。TEM图像显示，潜径平均直径从1.6 nm增加到4.5 nm，电子能量损失值从23 keV/nm增加到46.9 keV/nm。根据实验数据得出4-17 MeV/u重离子在GaN中形成潜在径迹的能量损失阈值约为23 keV/nm。观察了潜行径迹在电子束照射下的退火效应。表明氮化镓晶体具有较强的再结晶能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Latent tracks induced by swift heavy ions in Gallium nitride

The amorphous latent tracks in Gallium nitride (GaN) single crystal irradiated with different swift heavy ions (SHIs, ¹²⁹Xe, ¹⁸¹Ta and ²⁰⁹Bi ions) were investigated by transmission electron microscopy (TEM). TEM images showed that the average diameter of latent tracks increased from 1.6 to 4.5 nm with electronic energy loss values increasing from 23 to 46.9 keV/nm. The energy loss threshold for latent track formation in GaN was about 23 keV/nm for 4–17 MeV/u heavy ions concluded from experimental data. The annealing effect of exposuring latent tracks to electron beam was observed. It indicates that GaN crystals have strong recrystallization ability.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 物理-核科学技术

CiteScore

2.80

自引率

7.70%

发文量

231

审稿时长

1.9 months

期刊介绍： Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.