Pinbo Huang , Zhiang Liu , Changhao Wang , Ping Huang , Weirui Zhang , Zhen Cui
{"title":"皱化砷的有效掺杂及其在纳米发电机中的应用潜力","authors":"Pinbo Huang , Zhiang Liu , Changhao Wang , Ping Huang , Weirui Zhang , Zhen Cui","doi":"10.1016/j.vacuum.2025.114701","DOIUrl":null,"url":null,"abstract":"<div><div>Puckered arsenene exhibits a moderate bandgap, high carrier mobility, and unique anisotropic properties, making it a promising two-dimensional semiconducting material for nanoelectronic applications. In this study, we explored the molecular doping of puckered arsenene with tetracyanoethylene (TCNE) and tetrathiafulvalene (TTF) through first-principles calculations. TCNE acts as an electron acceptor, achieving effective p-type doping with a doping gap of only 0.12 eV. Although TTF initially ineffective due to a large doping gap of 0.70 eV, it becomes an effective n-type dopant under an external electric field. Furthermore, we demonstrate the potential of the TCNE-TTF co-doped puckered arsenene system as a nanogenerator for energy conversion. Theoretical calculations predict an high open-circuit voltage of 2.07 V. This study provides a novel approach for engineering the electronic properties of puckered arsenene and highlights its suitability for nanoelectronics and energy conversion.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"242 ","pages":"Article 114701"},"PeriodicalIF":3.9000,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Molecular doping of puckered arsenene for effective doping and potential for nanogenerator applications\",\"authors\":\"Pinbo Huang , Zhiang Liu , Changhao Wang , Ping Huang , Weirui Zhang , Zhen Cui\",\"doi\":\"10.1016/j.vacuum.2025.114701\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Puckered arsenene exhibits a moderate bandgap, high carrier mobility, and unique anisotropic properties, making it a promising two-dimensional semiconducting material for nanoelectronic applications. In this study, we explored the molecular doping of puckered arsenene with tetracyanoethylene (TCNE) and tetrathiafulvalene (TTF) through first-principles calculations. TCNE acts as an electron acceptor, achieving effective p-type doping with a doping gap of only 0.12 eV. Although TTF initially ineffective due to a large doping gap of 0.70 eV, it becomes an effective n-type dopant under an external electric field. Furthermore, we demonstrate the potential of the TCNE-TTF co-doped puckered arsenene system as a nanogenerator for energy conversion. Theoretical calculations predict an high open-circuit voltage of 2.07 V. This study provides a novel approach for engineering the electronic properties of puckered arsenene and highlights its suitability for nanoelectronics and energy conversion.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":\"242 \",\"pages\":\"Article 114701\"},\"PeriodicalIF\":3.9000,\"publicationDate\":\"2025-08-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X25006918\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X25006918","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Molecular doping of puckered arsenene for effective doping and potential for nanogenerator applications
Puckered arsenene exhibits a moderate bandgap, high carrier mobility, and unique anisotropic properties, making it a promising two-dimensional semiconducting material for nanoelectronic applications. In this study, we explored the molecular doping of puckered arsenene with tetracyanoethylene (TCNE) and tetrathiafulvalene (TTF) through first-principles calculations. TCNE acts as an electron acceptor, achieving effective p-type doping with a doping gap of only 0.12 eV. Although TTF initially ineffective due to a large doping gap of 0.70 eV, it becomes an effective n-type dopant under an external electric field. Furthermore, we demonstrate the potential of the TCNE-TTF co-doped puckered arsenene system as a nanogenerator for energy conversion. Theoretical calculations predict an high open-circuit voltage of 2.07 V. This study provides a novel approach for engineering the electronic properties of puckered arsenene and highlights its suitability for nanoelectronics and energy conversion.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.