MOF转化层状双氢氧化物CuNi2S4的合成及其电化学性能

IF 4.6 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Yifan Fang, Jincheng Fan, Risheng Hu, Haiou Liu, Bo Wu, Zhenqiang Tang, Wenbin Luo, Zisheng Chao
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引用次数: 0

摘要

超级电容器由于其快速充放电等优点,作为储能器件日益受到重视,因此迫切需要开发更高性能的器件。电极材料对超级电容器的性能起着决定性的作用。本研究以Cu金属-有机骨架为原料,用CuNi层状双氢氧化物合成了尖晶石CuNi2S4,其比电容高达7.1 F cm−2 (2784.3 F g−1)。经过5000次长循环后,电容保持率为79%。以CuNi2S4为阴极,活性炭为阳极组装了一个比电容为423.6 mF cm−2的复合式超级电容器。所制备的准固态超级电容器器件在并联配置中具有独特的电容叠加特性,在串联配置中具有独特的电压加性。所制备的固态超级电容器类器件在串联结构中具有独特的电压叠加行为,在并联结构中具有独特的电容叠加特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and electrochemical performances of CuNi2S4 from MOF transformed layered double hydroxide
Supercapacitors are gaining prominence as energy storage devices due to their advantages such as fast charging and discharging, so there is an urgent need to develop higher performance devices. The electrode materials play a decisive role in the performance of supercapacitors. In this study, spinel CuNi2S4 were synthesized by CuNi layered double hydroxides from Cu Metal-Organic Frameworks, which has a high specific capacitance of 7.1 F cm−2 (2784.3 F g−1). The capacitance retention rate of 79 % was retained after 5000 long cycles. A hybrid supercapacitor with CuNi2S4 as cathode and activated carbon as anode was assembled with a specific capacitance of 423.6 mF cm−2. The manufactured quasi-solid-state supercapacitor devices exhibit unique capacitance superposition properties in parallel configurations and voltage additive behavior in serial configurations. The fabricated solid-state supercapacitor-like devices show unique voltage stacking behavior in series configuration and capacitance stacking characteristics in parallel configuration.
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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