光敏硅- vo2 -石墨烯超材料中可调谐电磁感应透明和极化频率开关

IF 4.6 2区物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Results in Physics Pub Date : 2025-09-01 DOI:10.1016/j.rinp.2025.108418

Junjiao Lu, Xuejun Qiu, Yi Wang, Zhenzhou Cao, Jin Hou, Chengzhi Jin

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引用次数: 0

摘要

本研究提出了一种集成石墨烯、光敏硅和二氧化钒（VO2）的混合超材料平台，以实现在太赫兹（THz）波段的动态可调谐电磁感应透明度（EIT）和极化选择性频率开关。该单元电池由一个石墨烯十字形（GC）谐振器和四个四分之一石墨烯环形谐振器（qgr）组成，可以通过费米电平调制精确控制EIT窗口的幅度和频率。EIT效应表现出稳健的角不灵敏度（<70°），调频深度为0.176，调幅深度为0.907。利用光敏硅的光驱动电导率和VO2的绝缘体到金属相变，该结构在慢光状态之间动态切换，并在1.26 THz， 1.85 THz和1.14/1.79 THz下实现单频/双频偏振选择性传输，实现高达92%的调制深度。这种三材料协同克服了传统单组件系统的刚性，为太赫兹通信和传感设备提供了可重构的框架。

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Tunable electromagnetically induced transparency and polarization frequency switches in photosensitive silicon-VO2-graphene metamaterial

This work presents a hybrid metamaterial platform integrating graphene, photosensitive silicon, and vanadium dioxide (VO₂) to achieve dynamically tunable electromagnetically induced transparency (EIT) and polarization-selective frequency switching in the terahertz (THz) regime. The unit cell comprises a graphene cruciform (GC) resonator and four quarter graphene rings resonator (QGRs), enabling precise control of the EIT window’s amplitude and frequency through Fermi level modulation. The EIT effect exhibits robust angular insensitivity (<70°), with a frequency modulation depth of 0.176 and amplitude modulation depth of 0.907. Leveraging the light-driven conductivity of photosensitive silicon and the insulator-to-metal phase transition of VO₂, the structure dynamically switches between slow-light states and enables single-/dual-frequency polarization-selective transmission at 1.26 THz, 1.85 THz, and 1.14/1.79 THz, achieving a modulation depth up to 92 %. This tri-material synergy overcomes the rigidity of conventional single-component systems, offering a reconfigurable framework for THz communication and sensing devices.

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来源期刊

Results in Physics MATERIALS SCIENCE, MULTIDISCIPLINARYPHYSIC-PHYSICS, MULTIDISCIPLINARY

CiteScore

8.70

自引率

9.40%

发文量

754

审稿时长

50 days

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