Emmanuel Kayede, Christopher J. Clymore, Nirupam Hatui, Robert Hamwey, Stacia Keller, Umesh K. Mishra
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Optimizing TiN/Ru Schottky Contacts for N-Polar GaN
This study investigates the effect of titanium nitride (TiN) interlayers on the performance of ruthenium (Ru)-based Schottky diodes on N-polar GaN. The Ru Schottky diodes exhibited the highest mean Schottky barrier height of 0.69 0.03 eV; however, they demonstrated a lack of uniformity in barrier height across varying device sizes. Introducing 2 and 10 nm TiN interlayers between Ru and GaN led to consistent Schottky barrier heights and leakage characteristics for all device sizes. Notably, the 2 nm TiN/40 nm Ru configuration achieved an optimal balance between the low leakage current and uniform barrier properties, highlighting the role of TiN in obtaining desirable Schottky barrier performance.
期刊介绍：
Electronics Letters is an internationally renowned peer-reviewed rapid-communication journal that publishes short original research papers every two weeks. Its broad and interdisciplinary scope covers the latest developments in all electronic engineering related fields including communication, biomedical, optical and device technologies. Electronics Letters also provides further insight into some of the latest developments through special features and interviews.
Scope
As a journal at the forefront of its field, Electronics Letters publishes papers covering all themes of electronic and electrical engineering. The major themes of the journal are listed below.
Antennas and Propagation
Biomedical and Bioinspired Technologies, Signal Processing and Applications
Control Engineering
Electromagnetism: Theory, Materials and Devices
Electronic Circuits and Systems
Image, Video and Vision Processing and Applications
Information, Computing and Communications
Instrumentation and Measurement
Microwave Technology
Optical Communications
Photonics and Opto-Electronics
Power Electronics, Energy and Sustainability
Radar, Sonar and Navigation
Semiconductor Technology
Signal Processing
MIMO
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