飞秒激光在掺硼金刚石电极上形成石墨微通道:可控sp2功能化途径

IF 2 Q3 ENGINEERING, MANUFACTURING
Sagarika Banik , R. Ibdhu , N. Arunachalam , M.S. Ramachandra Rao
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引用次数: 0

摘要

金刚石是电化学分析、生物传感、储能等领域极具潜力的电极材料。然而,金刚石必须掺杂像硼这样的载流子才能成为p型半导体材料。在掺硼金刚石中建立高度局域化和几何受限的sp2石墨柱可以改善电极的电催化性能。在这项工作中,使用800 nm波长的100 fs激光脉冲在掺硼金刚石上形成石墨柱。在8.85 ~ 44.2 J/cm2的激光辐照强度和0.1 ~ mm/s的扫描速度下,石墨化效果较好。利用扫描电子显微镜和拉曼光谱技术对样品进行微观结构分析。拉曼光谱结果表明,22.1 J/cm2和0.5 mm/s的石墨化速度可以提高石墨柱的结晶度,抑制残余金刚石含量。在石墨柱上进行了四探针电阻率测量,以评估电阻率差异。首选激光通量为22.1 J/cm2时,最小电阻为66.39 Ω/sq;随着激光辐照量的增加,观察到电阻率的增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Formation of graphitic micro-channels on boron-doped diamond electrodes via femtosecond laser irradiation: A Route for controlled sp2 functionalization
Diamond is a promising material for electrodes in the field of electrochemical analysis, biosensing, and energy storage. However, the diamond has to be doped with charge carriers like boron to make it a p-type semiconductor material. Creating highly localized and geometrically confined sp2 graphitic columns in boron-doped diamonds can improve the electrocatalytic properties of the electrode. In this work, graphitic columns were created on boron-doped diamond using 100 fs laser pulses at 800 nm wavelength. The laser fluence of 8.85–––44.2 J/cm2 and the scanning speed of 0.1–1 mm/s were found to be suitable for graphitization. Microstructural analysis of the samples was done using scanning electron microscopy and Raman spectroscopy techniques. The Raman results showed that a suitable fluence of 22.1 J/cm2 and graphitization speed of 0.5 mm/s improves the crystallinity of the graphitic column and suppresses the residual diamond content. A four-probe resistivity measurement was done on the graphitic columns to evaluate the resistivity difference. A minimum resistance of 66.39 Ω/sq was observed at a preferred laser fluence of 22.1 J/cm2; with an increase in laser fluence, an increase in the resistivity was observed.
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来源期刊
Manufacturing Letters
Manufacturing Letters Engineering-Industrial and Manufacturing Engineering
CiteScore
4.20
自引率
5.10%
发文量
192
审稿时长
60 days
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