Sagarika Banik , R. Ibdhu , N. Arunachalam , M.S. Ramachandra Rao
{"title":"飞秒激光在掺硼金刚石电极上形成石墨微通道:可控sp2功能化途径","authors":"Sagarika Banik , R. Ibdhu , N. Arunachalam , M.S. Ramachandra Rao","doi":"10.1016/j.mfglet.2025.06.077","DOIUrl":null,"url":null,"abstract":"<div><div>Diamond is a promising material for electrodes in the field of electrochemical analysis, biosensing, and energy storage. However, the diamond has to be doped with charge carriers like boron to make it a p-type semiconductor material. Creating highly localized and geometrically confined sp<sup>2</sup> graphitic columns in boron-doped diamonds can improve the electrocatalytic properties of the electrode. In this work, graphitic columns were created on boron-doped diamond using 100 fs laser pulses at 800 nm wavelength. The laser fluence of 8.85–––44.2 J/cm<sup>2</sup> and the scanning speed of 0.1–1 mm/s were found to be suitable for graphitization. Microstructural analysis of the samples was done using scanning electron microscopy and Raman spectroscopy techniques. The Raman results showed that a suitable fluence of 22.1 J/cm<sup>2</sup> and graphitization speed of 0.5 mm/s improves the crystallinity of the graphitic column and suppresses the residual diamond content. A four-probe resistivity measurement was done on the graphitic columns to evaluate the resistivity difference. A minimum resistance of 66.39 Ω/sq was observed at a preferred laser fluence of 22.1 J/cm<sup>2</sup>; with an increase in laser fluence, an increase in the resistivity was observed.</div></div>","PeriodicalId":38186,"journal":{"name":"Manufacturing Letters","volume":"44 ","pages":"Pages 661-667"},"PeriodicalIF":2.0000,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Formation of graphitic micro-channels on boron-doped diamond electrodes via femtosecond laser irradiation: A Route for controlled sp2 functionalization\",\"authors\":\"Sagarika Banik , R. Ibdhu , N. Arunachalam , M.S. Ramachandra Rao\",\"doi\":\"10.1016/j.mfglet.2025.06.077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Diamond is a promising material for electrodes in the field of electrochemical analysis, biosensing, and energy storage. However, the diamond has to be doped with charge carriers like boron to make it a p-type semiconductor material. Creating highly localized and geometrically confined sp<sup>2</sup> graphitic columns in boron-doped diamonds can improve the electrocatalytic properties of the electrode. In this work, graphitic columns were created on boron-doped diamond using 100 fs laser pulses at 800 nm wavelength. The laser fluence of 8.85–––44.2 J/cm<sup>2</sup> and the scanning speed of 0.1–1 mm/s were found to be suitable for graphitization. Microstructural analysis of the samples was done using scanning electron microscopy and Raman spectroscopy techniques. The Raman results showed that a suitable fluence of 22.1 J/cm<sup>2</sup> and graphitization speed of 0.5 mm/s improves the crystallinity of the graphitic column and suppresses the residual diamond content. A four-probe resistivity measurement was done on the graphitic columns to evaluate the resistivity difference. A minimum resistance of 66.39 Ω/sq was observed at a preferred laser fluence of 22.1 J/cm<sup>2</sup>; with an increase in laser fluence, an increase in the resistivity was observed.</div></div>\",\"PeriodicalId\":38186,\"journal\":{\"name\":\"Manufacturing Letters\",\"volume\":\"44 \",\"pages\":\"Pages 661-667\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2025-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Manufacturing Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2213846325001099\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, MANUFACTURING\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Manufacturing Letters","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2213846325001099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, MANUFACTURING","Score":null,"Total":0}
Formation of graphitic micro-channels on boron-doped diamond electrodes via femtosecond laser irradiation: A Route for controlled sp2 functionalization
Diamond is a promising material for electrodes in the field of electrochemical analysis, biosensing, and energy storage. However, the diamond has to be doped with charge carriers like boron to make it a p-type semiconductor material. Creating highly localized and geometrically confined sp2 graphitic columns in boron-doped diamonds can improve the electrocatalytic properties of the electrode. In this work, graphitic columns were created on boron-doped diamond using 100 fs laser pulses at 800 nm wavelength. The laser fluence of 8.85–––44.2 J/cm2 and the scanning speed of 0.1–1 mm/s were found to be suitable for graphitization. Microstructural analysis of the samples was done using scanning electron microscopy and Raman spectroscopy techniques. The Raman results showed that a suitable fluence of 22.1 J/cm2 and graphitization speed of 0.5 mm/s improves the crystallinity of the graphitic column and suppresses the residual diamond content. A four-probe resistivity measurement was done on the graphitic columns to evaluate the resistivity difference. A minimum resistance of 66.39 Ω/sq was observed at a preferred laser fluence of 22.1 J/cm2; with an increase in laser fluence, an increase in the resistivity was observed.