Aluminum nitride micro ribbons photodetector for vacuum ultraviolet detection: High selectivity, fast response and thermal robustness

Vacuum ultraviolet (VUV) photodetectors are essential for applications in space exploration, high-energy physics, and biological sensing. However, conventional devices typically rely on complex optical filters, high operating voltages, and bulky configurations, which limit their integration and scalability. In this work, high-quality aluminum nitride (AlN) single-crystalline micro ribbons with ab-plane-oriented growth were synthesized using the physical vapor transport (PVT) method and utilized to fabricate metal–semiconductor–metal (MSM) photoconductive detector. The device demonstrates outstanding VUV selectivity, with a rejection ratio (R₁₈₅/R₃₁₀) of 1293. Under 185 nm illumination, it delivers a photo-to-dark current ratio (PDCR) exceeding 1000. Temporal response measurements reveal a rise time of 170 ns and a decay time of 53 μs, indicating excellent dynamic performance. Furthermore, the device maintains stable operation at temperatures up to 150 °C, confirming its excellent thermal robustness. This work shows the potential of PVT-grown AlN micro ribbons as a promising material platform for compact, high-performance, and filter-free VUV photodetectors.