在Gd3Sc1.5In0.5Ga3O12石榴石中诱导b位畸变以适应Cr3+离子:为近红外光谱应用实现高量子效率和热稳定的宽带近红外荧光粉

IF 7.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Di Qian, Yahong Jin, Haoyi Wu, Yihua Hu
{"title":"在Gd3Sc1.5In0.5Ga3O12石榴石中诱导b位畸变以适应Cr3+离子:为近红外光谱应用实现高量子效率和热稳定的宽带近红外荧光粉","authors":"Di Qian, Yahong Jin, Haoyi Wu, Yihua Hu","doi":"10.1007/s40843-025-3469-7","DOIUrl":null,"url":null,"abstract":"<p>Broadband near-infrared (NIR) phosphors are crucial for assembling portable NIR light sources. However, developing efficient and thermally stable broadband NIR phosphors remains challenging. Here, a novel Cr<sup>3+</sup>-doped garnet phosphor, Gd<sub>3</sub>Sc<sub>1.5</sub>In<sub>0.5</sub>Ga<sub>3</sub>O<sub>12</sub>:Cr<sup>3+</sup>, is developed by modulating the six-coordinate polyhedral structure. Under 460 nm blue light excitation, it exhibits broadband NIR emission centered at 775 nm with a full width at half maximum (FWHM) exceeding 135 nm, which is attributed to the increased distortion of the B-sites via cation substitution. Specifically, substituting Sc<sup>3+</sup> with In<sup>3+</sup> in the designed samples reduces the local site symmetry, overcomes the parity selection rule, and results in greater oscillator strength for electronic transitions, thereby improving optical properties. This leads to an impressive internal quantum efficiency (IQE) of 98.29%, along with excellent thermal stability performance (<i>I</i><sub>423 K</sub> = 85.50%), which is conducive to practical applications in NIR light sources. The NIR phosphor-converted light-emitting diode (pc-LED) fabricated with the optimized phosphor and a 460 nm blue LED chip demonstrates an outstanding NIR power conversion efficiency (PCE) of 19.75% at 30 mA and an NIR output power of 276.01 mW at 1200 mA. Potential applications in night vision, non-invasive imaging, and non-destructive testing are explored. These results highlight the enhancement of phosphor performance through cation substitution strategies, achieving a balance between QE and thermal stability. These findings are expected to promote the development of NIR pc-LEDs as high-performance light sources for miniaturized NIR spectrometers.\n</p>","PeriodicalId":773,"journal":{"name":"Science China Materials","volume":"11 1","pages":""},"PeriodicalIF":7.4000,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Inducing B-site distortion in Gd3Sc1.5In0.5Ga3O12 garnet to accommodate Cr3+ ions: achieving high quantum efficiency and thermally stable broadband NIR phosphors for NIR spectroscopy applications\",\"authors\":\"Di Qian, Yahong Jin, Haoyi Wu, Yihua Hu\",\"doi\":\"10.1007/s40843-025-3469-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Broadband near-infrared (NIR) phosphors are crucial for assembling portable NIR light sources. However, developing efficient and thermally stable broadband NIR phosphors remains challenging. Here, a novel Cr<sup>3+</sup>-doped garnet phosphor, Gd<sub>3</sub>Sc<sub>1.5</sub>In<sub>0.5</sub>Ga<sub>3</sub>O<sub>12</sub>:Cr<sup>3+</sup>, is developed by modulating the six-coordinate polyhedral structure. Under 460 nm blue light excitation, it exhibits broadband NIR emission centered at 775 nm with a full width at half maximum (FWHM) exceeding 135 nm, which is attributed to the increased distortion of the B-sites via cation substitution. Specifically, substituting Sc<sup>3+</sup> with In<sup>3+</sup> in the designed samples reduces the local site symmetry, overcomes the parity selection rule, and results in greater oscillator strength for electronic transitions, thereby improving optical properties. This leads to an impressive internal quantum efficiency (IQE) of 98.29%, along with excellent thermal stability performance (<i>I</i><sub>423 K</sub> = 85.50%), which is conducive to practical applications in NIR light sources. The NIR phosphor-converted light-emitting diode (pc-LED) fabricated with the optimized phosphor and a 460 nm blue LED chip demonstrates an outstanding NIR power conversion efficiency (PCE) of 19.75% at 30 mA and an NIR output power of 276.01 mW at 1200 mA. Potential applications in night vision, non-invasive imaging, and non-destructive testing are explored. These results highlight the enhancement of phosphor performance through cation substitution strategies, achieving a balance between QE and thermal stability. These findings are expected to promote the development of NIR pc-LEDs as high-performance light sources for miniaturized NIR spectrometers.\\n</p>\",\"PeriodicalId\":773,\"journal\":{\"name\":\"Science China Materials\",\"volume\":\"11 1\",\"pages\":\"\"},\"PeriodicalIF\":7.4000,\"publicationDate\":\"2025-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science China Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1007/s40843-025-3469-7\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s40843-025-3469-7","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

宽带近红外(NIR)荧光粉是组装便携式近红外光源的关键材料。然而,开发高效和热稳定的宽带近红外荧光粉仍然具有挑战性。本文通过调制六坐标多面体结构,制备了一种新型的掺杂Cr3+的石榴石荧光粉Gd3Sc1.5In0.5Ga3O12:Cr3+。在460 nm蓝光激发下,它表现出以775 nm为中心的宽带近红外发射,半峰全宽(FWHM)超过135 nm,这是由于阳离子取代增加了b位的畸变。具体来说,在设计的样品中,用In3+取代Sc3+降低了局域位对称性,克服了宇称选择规则,提高了电子跃迁的振荡器强度,从而改善了光学性能。这导致令人印象深刻的内部量子效率(IQE)达到98.29%,以及出色的热稳定性性能(I423 K = 85.50%),这有利于近红外光源的实际应用。利用优化后的荧光粉和460 nm蓝光LED芯片制备的近红外磷转换发光二极管(pc-LED)在30 mA时的近红外功率转换效率(PCE)为19.75%,在1200 mA时的近红外输出功率为276.01 mW。在夜视、无创成像和无损检测方面的潜在应用。这些结果强调了通过阳离子取代策略增强荧光粉性能,实现了QE和热稳定性之间的平衡。这些发现有望推动近红外pc- led作为小型化近红外光谱仪的高性能光源的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Inducing B-site distortion in Gd3Sc1.5In0.5Ga3O12 garnet to accommodate Cr3+ ions: achieving high quantum efficiency and thermally stable broadband NIR phosphors for NIR spectroscopy applications

Broadband near-infrared (NIR) phosphors are crucial for assembling portable NIR light sources. However, developing efficient and thermally stable broadband NIR phosphors remains challenging. Here, a novel Cr3+-doped garnet phosphor, Gd3Sc1.5In0.5Ga3O12:Cr3+, is developed by modulating the six-coordinate polyhedral structure. Under 460 nm blue light excitation, it exhibits broadband NIR emission centered at 775 nm with a full width at half maximum (FWHM) exceeding 135 nm, which is attributed to the increased distortion of the B-sites via cation substitution. Specifically, substituting Sc3+ with In3+ in the designed samples reduces the local site symmetry, overcomes the parity selection rule, and results in greater oscillator strength for electronic transitions, thereby improving optical properties. This leads to an impressive internal quantum efficiency (IQE) of 98.29%, along with excellent thermal stability performance (I423 K = 85.50%), which is conducive to practical applications in NIR light sources. The NIR phosphor-converted light-emitting diode (pc-LED) fabricated with the optimized phosphor and a 460 nm blue LED chip demonstrates an outstanding NIR power conversion efficiency (PCE) of 19.75% at 30 mA and an NIR output power of 276.01 mW at 1200 mA. Potential applications in night vision, non-invasive imaging, and non-destructive testing are explored. These results highlight the enhancement of phosphor performance through cation substitution strategies, achieving a balance between QE and thermal stability. These findings are expected to promote the development of NIR pc-LEDs as high-performance light sources for miniaturized NIR spectrometers.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Science China Materials
Science China Materials Materials Science-General Materials Science
CiteScore
11.40
自引率
7.40%
发文量
949
期刊介绍: Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信