Ze-Yuan Yang, Qiu-Yu Luo, Chong-Yu Wang, Yang-Wei Wang, Jiang-Hu Yu, Xi Yan, Yi-Xin Zhang, Xing Yang, Jing Feng, Zhen-Hua Ge
{"title":"通过带结构和载流子浓度调制实现了(Ga, Yb)共掺杂Bi2S3块体的高热电性能","authors":"Ze-Yuan Yang, Qiu-Yu Luo, Chong-Yu Wang, Yang-Wei Wang, Jiang-Hu Yu, Xi Yan, Yi-Xin Zhang, Xing Yang, Jing Feng, Zhen-Hua Ge","doi":"10.1016/j.ceramint.2025.06.218","DOIUrl":null,"url":null,"abstract":"<div><div>Due to their high abundance, low cost, and low toxicity, Bi<sub>2</sub>S<sub>3</sub><span>-based thermoelectric materials without Te are significantly promising for eco-friendly and scalable applications. However, the ZT value of Bi</span><sub>2</sub>S<sub>3</sub><span>-based is not high enough and must be further improved. The rare-earth element doping is a promising strategy for synergistically enhancing the electrical and thermal transport properties. This study selected GaTe and YbBr</span><sub>3</sub> for co-doping in Bi<sub>2</sub>S<sub>3</sub><span><span> polycrystals<span><span> using a solid-state reaction and spark plasma sintering<span>, which enabled simultaneous modulation of the band structure and carrier concentration for significantly enhanced </span></span>thermoelectric and mechanical properties. Specifically, the synergistic optimization of electrical and </span></span>phonon transport was initially achieved through GaTe doping in Bi</span><sub>2</sub>S<sub>3</sub><span>, which effectively reduced the lattice thermal conductivity<span> while enhancing electrical conductivity. However, the improvement in thermoelectric performance with GaTe doping alone remained limited. Br substituted S to introduce extra electrons, while Yb replaced Bi to reduce the bandgap from 1.38 to 1.05 eV. The two effects synergistically optimized the electrical transport properties of the matrix. As a result, the optimized Bi</span></span><sub>2</sub>S<sub>3</sub> + 0.5 wt% GaTe +1.0 wt% YbBr<sub>3</sub> sample achieved an exceptional average power factor of 475.4 μW m<sup>−1</sup> K<sup>−2</sup><span> over 323–773 K. Additionally, point defects<span><span>, dislocations, and micropores induced by the second phase contributed to strong phonon scattering, leading to a low lattice </span>thermal conductivity of 0.56 W m</span></span><sup>−1</sup> K<sup>−1</sup> at 773 K. Consequently, a peak <em>ZT</em> value of 0.67 at 773 K and a high average <em>ZT</em> value of 0.45 over 323–773 K were achieved, which were relatively higher than other values reported in the literature. Furthermore, the mechanical properties were improved, with hardness increasing from 2.55 to 2.93 GPa, making Bi<sub>2</sub>S<sub>3</sub> more deformation-resistant and durable. This study showed that co-doping rare earth elements was an effective approach for enhancing the thermoelectric and mechanical properties of the Bi<sub>2</sub>S<sub>3</sub> material.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 23","pages":"Pages 39833-39842"},"PeriodicalIF":5.6000,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High thermoelectric performance in (Ga, Yb) Co-doped Bi2S3 bulks achieved by band structure and carrier concentration modulation\",\"authors\":\"Ze-Yuan Yang, Qiu-Yu Luo, Chong-Yu Wang, Yang-Wei Wang, Jiang-Hu Yu, Xi Yan, Yi-Xin Zhang, Xing Yang, Jing Feng, Zhen-Hua Ge\",\"doi\":\"10.1016/j.ceramint.2025.06.218\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Due to their high abundance, low cost, and low toxicity, Bi<sub>2</sub>S<sub>3</sub><span>-based thermoelectric materials without Te are significantly promising for eco-friendly and scalable applications. However, the ZT value of Bi</span><sub>2</sub>S<sub>3</sub><span>-based is not high enough and must be further improved. The rare-earth element doping is a promising strategy for synergistically enhancing the electrical and thermal transport properties. This study selected GaTe and YbBr</span><sub>3</sub> for co-doping in Bi<sub>2</sub>S<sub>3</sub><span><span> polycrystals<span><span> using a solid-state reaction and spark plasma sintering<span>, which enabled simultaneous modulation of the band structure and carrier concentration for significantly enhanced </span></span>thermoelectric and mechanical properties. Specifically, the synergistic optimization of electrical and </span></span>phonon transport was initially achieved through GaTe doping in Bi</span><sub>2</sub>S<sub>3</sub><span>, which effectively reduced the lattice thermal conductivity<span> while enhancing electrical conductivity. However, the improvement in thermoelectric performance with GaTe doping alone remained limited. Br substituted S to introduce extra electrons, while Yb replaced Bi to reduce the bandgap from 1.38 to 1.05 eV. The two effects synergistically optimized the electrical transport properties of the matrix. As a result, the optimized Bi</span></span><sub>2</sub>S<sub>3</sub> + 0.5 wt% GaTe +1.0 wt% YbBr<sub>3</sub> sample achieved an exceptional average power factor of 475.4 μW m<sup>−1</sup> K<sup>−2</sup><span> over 323–773 K. Additionally, point defects<span><span>, dislocations, and micropores induced by the second phase contributed to strong phonon scattering, leading to a low lattice </span>thermal conductivity of 0.56 W m</span></span><sup>−1</sup> K<sup>−1</sup> at 773 K. Consequently, a peak <em>ZT</em> value of 0.67 at 773 K and a high average <em>ZT</em> value of 0.45 over 323–773 K were achieved, which were relatively higher than other values reported in the literature. Furthermore, the mechanical properties were improved, with hardness increasing from 2.55 to 2.93 GPa, making Bi<sub>2</sub>S<sub>3</sub> more deformation-resistant and durable. This study showed that co-doping rare earth elements was an effective approach for enhancing the thermoelectric and mechanical properties of the Bi<sub>2</sub>S<sub>3</sub> material.</div></div>\",\"PeriodicalId\":267,\"journal\":{\"name\":\"Ceramics International\",\"volume\":\"51 23\",\"pages\":\"Pages 39833-39842\"},\"PeriodicalIF\":5.6000,\"publicationDate\":\"2025-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ceramics International\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0272884225028755\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, CERAMICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ceramics International","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0272884225028755","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
High thermoelectric performance in (Ga, Yb) Co-doped Bi2S3 bulks achieved by band structure and carrier concentration modulation
Due to their high abundance, low cost, and low toxicity, Bi2S3-based thermoelectric materials without Te are significantly promising for eco-friendly and scalable applications. However, the ZT value of Bi2S3-based is not high enough and must be further improved. The rare-earth element doping is a promising strategy for synergistically enhancing the electrical and thermal transport properties. This study selected GaTe and YbBr3 for co-doping in Bi2S3 polycrystals using a solid-state reaction and spark plasma sintering, which enabled simultaneous modulation of the band structure and carrier concentration for significantly enhanced thermoelectric and mechanical properties. Specifically, the synergistic optimization of electrical and phonon transport was initially achieved through GaTe doping in Bi2S3, which effectively reduced the lattice thermal conductivity while enhancing electrical conductivity. However, the improvement in thermoelectric performance with GaTe doping alone remained limited. Br substituted S to introduce extra electrons, while Yb replaced Bi to reduce the bandgap from 1.38 to 1.05 eV. The two effects synergistically optimized the electrical transport properties of the matrix. As a result, the optimized Bi2S3 + 0.5 wt% GaTe +1.0 wt% YbBr3 sample achieved an exceptional average power factor of 475.4 μW m−1 K−2 over 323–773 K. Additionally, point defects, dislocations, and micropores induced by the second phase contributed to strong phonon scattering, leading to a low lattice thermal conductivity of 0.56 W m−1 K−1 at 773 K. Consequently, a peak ZT value of 0.67 at 773 K and a high average ZT value of 0.45 over 323–773 K were achieved, which were relatively higher than other values reported in the literature. Furthermore, the mechanical properties were improved, with hardness increasing from 2.55 to 2.93 GPa, making Bi2S3 more deformation-resistant and durable. This study showed that co-doping rare earth elements was an effective approach for enhancing the thermoelectric and mechanical properties of the Bi2S3 material.
期刊介绍:
Ceramics International covers the science of advanced ceramic materials. The journal encourages contributions that demonstrate how an understanding of the basic chemical and physical phenomena may direct materials design and stimulate ideas for new or improved processing techniques, in order to obtain materials with desired structural features and properties.
Ceramics International covers oxide and non-oxide ceramics, functional glasses, glass ceramics, amorphous inorganic non-metallic materials (and their combinations with metal and organic materials), in the form of particulates, dense or porous bodies, thin/thick films and laminated, graded and composite structures. Process related topics such as ceramic-ceramic joints or joining ceramics with dissimilar materials, as well as surface finishing and conditioning are also covered. Besides traditional processing techniques, manufacturing routes of interest include innovative procedures benefiting from externally applied stresses, electromagnetic fields and energetic beams, as well as top-down and self-assembly nanotechnology approaches. In addition, the journal welcomes submissions on bio-inspired and bio-enabled materials designs, experimentally validated multi scale modelling and simulation for materials design, and the use of the most advanced chemical and physical characterization techniques of structure, properties and behaviour.
Technologically relevant low-dimensional systems are a particular focus of Ceramics International. These include 0, 1 and 2-D nanomaterials (also covering CNTs, graphene and related materials, and diamond-like carbons), their nanocomposites, as well as nano-hybrids and hierarchical multifunctional nanostructures that might integrate molecular, biological and electronic components.