{"title":"应用拉伸应变在金刚石(113)表面有效掺杂磷:第一性原理计算","authors":"Cong Li, Liuan Li, Nan Gao, Hongdong Li","doi":"10.1016/j.diamond.2025.112790","DOIUrl":null,"url":null,"abstract":"<div><div>Phosphorus (P) doping is the most reliable n-type dopant in diamond, while the low solubility of P dopant limits its application. In order to solve this disadvantage, the formation energy values for P doping in pristine, hydrogenated and oxidized diamond (100), (110), (111) and (113) surfaces are systematically studied by first-principles calculation. The results show that the formation energy for diamond (113) surface is smaller than that of diamond (100), (110) and (111) surfaces, indicating its highest P doping efficiency. In addition, the tensile strain significantly reduces the formation energy of P-doped diamond surface, thus the doping efficiency improves. These findings provide new directions for the realization of P-doped n-type diamond and help in the design of diamond-based semiconductor devices.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"159 ","pages":"Article 112790"},"PeriodicalIF":5.1000,"publicationDate":"2025-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Efficient phosphorus doping on diamond (113) surface by applying tensile strain: first principles calculation\",\"authors\":\"Cong Li, Liuan Li, Nan Gao, Hongdong Li\",\"doi\":\"10.1016/j.diamond.2025.112790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Phosphorus (P) doping is the most reliable n-type dopant in diamond, while the low solubility of P dopant limits its application. In order to solve this disadvantage, the formation energy values for P doping in pristine, hydrogenated and oxidized diamond (100), (110), (111) and (113) surfaces are systematically studied by first-principles calculation. The results show that the formation energy for diamond (113) surface is smaller than that of diamond (100), (110) and (111) surfaces, indicating its highest P doping efficiency. In addition, the tensile strain significantly reduces the formation energy of P-doped diamond surface, thus the doping efficiency improves. These findings provide new directions for the realization of P-doped n-type diamond and help in the design of diamond-based semiconductor devices.</div></div>\",\"PeriodicalId\":11266,\"journal\":{\"name\":\"Diamond and Related Materials\",\"volume\":\"159 \",\"pages\":\"Article 112790\"},\"PeriodicalIF\":5.1000,\"publicationDate\":\"2025-08-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Diamond and Related Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925963525008477\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, COATINGS & FILMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925963525008477","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
Efficient phosphorus doping on diamond (113) surface by applying tensile strain: first principles calculation
Phosphorus (P) doping is the most reliable n-type dopant in diamond, while the low solubility of P dopant limits its application. In order to solve this disadvantage, the formation energy values for P doping in pristine, hydrogenated and oxidized diamond (100), (110), (111) and (113) surfaces are systematically studied by first-principles calculation. The results show that the formation energy for diamond (113) surface is smaller than that of diamond (100), (110) and (111) surfaces, indicating its highest P doping efficiency. In addition, the tensile strain significantly reduces the formation energy of P-doped diamond surface, thus the doping efficiency improves. These findings provide new directions for the realization of P-doped n-type diamond and help in the design of diamond-based semiconductor devices.
期刊介绍:
DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices.
The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.