{"title":"垂直磁隧道结阵列中电压门控自旋轨道转矩的超快开关和选择性数据写入","authors":"Haojie Zhang;Xinyuan Li;Zhaochun Liu;Jiahao Liu;Weixiang Li;Jiaqi Lu;Shiyang Lu;Danrong Xiong;Kaihua Cao;Shouzhong Peng","doi":"10.1109/TMAG.2025.3565284","DOIUrl":null,"url":null,"abstract":"Spin-orbit torque magnetic random access memory (SOT-MRAM) exhibits substantial promise as a candidate for next-generation high-performance memory technologies. Ultrafast switching and high density are essential for the practical application of SOT-MRAM. In this article, we experimentally demonstrate spin-orbit torque (SOT) switching in W-based perpendicular magnetic tunnel junctions (MTJs) with a diameter of 80 nm. Our experiments show that W-based MTJs maintain reliable switching under nanosecond pulses. Dynamic switching experiments reveal that ultrafast switching with an incubation time of 0.3 ns and a switching time of 0.3 ns can be achieved. Furthermore, when a gate voltage of 1 V is applied, the SOT switching power consumption is reduced by 76% owing to the voltage-controlled magnetic anisotropy (VCMA) effect. Subsequently, we fabricate a memory array incorporating multiple MTJs on a shared W strip to improve storage density. Selective data writing within the MTJ array is demonstrated with voltage-gated SOT (VGSOT) switching, achieving a write error rate (WER) below <inline-formula> <tex-math>$6.7\\times 10^{-5}$ </tex-math></inline-formula>. These findings showcase the superior capabilities of VGSOT devices and emphasize their promising potential for magnetic random access memory (MRAM) applications.","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 9","pages":"1-5"},"PeriodicalIF":1.9000,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultrafast Switching and Selective Data Writing Through Voltage-Gated Spin-Orbit Torque in Perpendicular Magnetic Tunnel Junction Arrays\",\"authors\":\"Haojie Zhang;Xinyuan Li;Zhaochun Liu;Jiahao Liu;Weixiang Li;Jiaqi Lu;Shiyang Lu;Danrong Xiong;Kaihua Cao;Shouzhong Peng\",\"doi\":\"10.1109/TMAG.2025.3565284\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Spin-orbit torque magnetic random access memory (SOT-MRAM) exhibits substantial promise as a candidate for next-generation high-performance memory technologies. Ultrafast switching and high density are essential for the practical application of SOT-MRAM. In this article, we experimentally demonstrate spin-orbit torque (SOT) switching in W-based perpendicular magnetic tunnel junctions (MTJs) with a diameter of 80 nm. Our experiments show that W-based MTJs maintain reliable switching under nanosecond pulses. Dynamic switching experiments reveal that ultrafast switching with an incubation time of 0.3 ns and a switching time of 0.3 ns can be achieved. Furthermore, when a gate voltage of 1 V is applied, the SOT switching power consumption is reduced by 76% owing to the voltage-controlled magnetic anisotropy (VCMA) effect. Subsequently, we fabricate a memory array incorporating multiple MTJs on a shared W strip to improve storage density. Selective data writing within the MTJ array is demonstrated with voltage-gated SOT (VGSOT) switching, achieving a write error rate (WER) below <inline-formula> <tex-math>$6.7\\\\times 10^{-5}$ </tex-math></inline-formula>. These findings showcase the superior capabilities of VGSOT devices and emphasize their promising potential for magnetic random access memory (MRAM) applications.\",\"PeriodicalId\":13405,\"journal\":{\"name\":\"IEEE Transactions on Magnetics\",\"volume\":\"61 9\",\"pages\":\"1-5\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Magnetics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10980142/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Magnetics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10980142/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Ultrafast Switching and Selective Data Writing Through Voltage-Gated Spin-Orbit Torque in Perpendicular Magnetic Tunnel Junction Arrays
Spin-orbit torque magnetic random access memory (SOT-MRAM) exhibits substantial promise as a candidate for next-generation high-performance memory technologies. Ultrafast switching and high density are essential for the practical application of SOT-MRAM. In this article, we experimentally demonstrate spin-orbit torque (SOT) switching in W-based perpendicular magnetic tunnel junctions (MTJs) with a diameter of 80 nm. Our experiments show that W-based MTJs maintain reliable switching under nanosecond pulses. Dynamic switching experiments reveal that ultrafast switching with an incubation time of 0.3 ns and a switching time of 0.3 ns can be achieved. Furthermore, when a gate voltage of 1 V is applied, the SOT switching power consumption is reduced by 76% owing to the voltage-controlled magnetic anisotropy (VCMA) effect. Subsequently, we fabricate a memory array incorporating multiple MTJs on a shared W strip to improve storage density. Selective data writing within the MTJ array is demonstrated with voltage-gated SOT (VGSOT) switching, achieving a write error rate (WER) below $6.7\times 10^{-5}$ . These findings showcase the superior capabilities of VGSOT devices and emphasize their promising potential for magnetic random access memory (MRAM) applications.
期刊介绍:
Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.