垂直磁隧道结阵列中电压门控自旋轨道转矩的超快开关和选择性数据写入

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Haojie Zhang;Xinyuan Li;Zhaochun Liu;Jiahao Liu;Weixiang Li;Jiaqi Lu;Shiyang Lu;Danrong Xiong;Kaihua Cao;Shouzhong Peng
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引用次数: 0

摘要

自旋轨道转矩磁随机存取存储器(SOT-MRAM)作为下一代高性能存储技术的候选产品,显示出巨大的前景。超快开关和高密度是实现SOT-MRAM实际应用的必要条件。在本文中,我们实验证明了直径为80 nm的w基垂直磁隧道结(MTJs)的自旋轨道转矩(SOT)开关。我们的实验表明,基于w的MTJs在纳秒脉冲下保持可靠的开关。动态开关实验表明,该方法可实现培养时间为0.3 ns、开关时间为0.3 ns的超快开关。此外,当施加1 V的栅极电压时,由于电压控制磁各向异性(VCMA)效应,SOT开关功耗降低了76%。随后,我们在共享W条上制作了包含多个mtj的存储阵列,以提高存储密度。通过电压门控SOT (VGSOT)开关演示了MTJ阵列内的选择性数据写入,实现了低于6.7\乘以10^{-5}$的写入错误率(WER)。这些发现展示了VGSOT器件的优越性能,并强调了它们在磁随机存取存储器(MRAM)应用方面的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultrafast Switching and Selective Data Writing Through Voltage-Gated Spin-Orbit Torque in Perpendicular Magnetic Tunnel Junction Arrays
Spin-orbit torque magnetic random access memory (SOT-MRAM) exhibits substantial promise as a candidate for next-generation high-performance memory technologies. Ultrafast switching and high density are essential for the practical application of SOT-MRAM. In this article, we experimentally demonstrate spin-orbit torque (SOT) switching in W-based perpendicular magnetic tunnel junctions (MTJs) with a diameter of 80 nm. Our experiments show that W-based MTJs maintain reliable switching under nanosecond pulses. Dynamic switching experiments reveal that ultrafast switching with an incubation time of 0.3 ns and a switching time of 0.3 ns can be achieved. Furthermore, when a gate voltage of 1 V is applied, the SOT switching power consumption is reduced by 76% owing to the voltage-controlled magnetic anisotropy (VCMA) effect. Subsequently, we fabricate a memory array incorporating multiple MTJs on a shared W strip to improve storage density. Selective data writing within the MTJ array is demonstrated with voltage-gated SOT (VGSOT) switching, achieving a write error rate (WER) below $6.7\times 10^{-5}$ . These findings showcase the superior capabilities of VGSOT devices and emphasize their promising potential for magnetic random access memory (MRAM) applications.
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来源期刊
IEEE Transactions on Magnetics
IEEE Transactions on Magnetics 工程技术-工程:电子与电气
CiteScore
4.00
自引率
14.30%
发文量
565
审稿时长
4.1 months
期刊介绍: Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
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