Weiqiang Li , Nan Zhou , Zhuoxi Lian , Shengze Wang , Dan Wang , Guohe Zhang
{"title":"二次电子发射功能层微通道板关键参数对器件增益的演化影响","authors":"Weiqiang Li , Nan Zhou , Zhuoxi Lian , Shengze Wang , Dan Wang , Guohe Zhang","doi":"10.1016/j.vacuum.2025.114703","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, we conduct a research on key parameters affecting microchannel plate (MCP) gain. By depositing Al<sub>2</sub>O<sub>3</sub> and MgO nanofilms on the MCP inner walls, the device gain increases from 10<sup>4</sup> to over 10<sup>5</sup> at 1500 V bias voltage. Simulations demonstrate that secondary electron emission (SEE) of the microchannel inner wall, bias voltage, and MCP architecture parameters can substantially affects MCP gain. Specifically, as the SEE yield peak value (<em>δ</em><sub>m</sub>) grows from 3 to 4, the MCP gain improves by over two orders of magnitude. Additionally, when the SEE functional layer thickness increases from 1 nm to 5 nm, <em>δ</em><sub>m</sub> climbs from 2.6 to 3.8, leading to an increase of MCP gain from 3 × 10<sup>3</sup> to 5 × 10<sup>5</sup>. Simulation also indicates the MCP gain rises 2.3 times with every 100 V increase in bias voltage. Besides, the microchannel aspect ratio influences the MCP gain by affecting the electron collision times inside the microchannels, with simulations showing the MCP gain rises from 1.5 × 10<sup>2</sup> to 4 × 10<sup>5</sup> at 1000 V bias voltage when the aspect ratio increases from 22 to 42. This work provides a detailed discussion of the key parameters influence on MCP gain, which holds engineering significance for enhancing the MCP performance.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"241 ","pages":"Article 114703"},"PeriodicalIF":3.9000,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evolution impact of key parameters on device gain for the microchannel plates with secondary electron emission functional layer\",\"authors\":\"Weiqiang Li , Nan Zhou , Zhuoxi Lian , Shengze Wang , Dan Wang , Guohe Zhang\",\"doi\":\"10.1016/j.vacuum.2025.114703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, we conduct a research on key parameters affecting microchannel plate (MCP) gain. By depositing Al<sub>2</sub>O<sub>3</sub> and MgO nanofilms on the MCP inner walls, the device gain increases from 10<sup>4</sup> to over 10<sup>5</sup> at 1500 V bias voltage. Simulations demonstrate that secondary electron emission (SEE) of the microchannel inner wall, bias voltage, and MCP architecture parameters can substantially affects MCP gain. Specifically, as the SEE yield peak value (<em>δ</em><sub>m</sub>) grows from 3 to 4, the MCP gain improves by over two orders of magnitude. Additionally, when the SEE functional layer thickness increases from 1 nm to 5 nm, <em>δ</em><sub>m</sub> climbs from 2.6 to 3.8, leading to an increase of MCP gain from 3 × 10<sup>3</sup> to 5 × 10<sup>5</sup>. Simulation also indicates the MCP gain rises 2.3 times with every 100 V increase in bias voltage. Besides, the microchannel aspect ratio influences the MCP gain by affecting the electron collision times inside the microchannels, with simulations showing the MCP gain rises from 1.5 × 10<sup>2</sup> to 4 × 10<sup>5</sup> at 1000 V bias voltage when the aspect ratio increases from 22 to 42. This work provides a detailed discussion of the key parameters influence on MCP gain, which holds engineering significance for enhancing the MCP performance.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":\"241 \",\"pages\":\"Article 114703\"},\"PeriodicalIF\":3.9000,\"publicationDate\":\"2025-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X25006931\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X25006931","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Evolution impact of key parameters on device gain for the microchannel plates with secondary electron emission functional layer
In this work, we conduct a research on key parameters affecting microchannel plate (MCP) gain. By depositing Al2O3 and MgO nanofilms on the MCP inner walls, the device gain increases from 104 to over 105 at 1500 V bias voltage. Simulations demonstrate that secondary electron emission (SEE) of the microchannel inner wall, bias voltage, and MCP architecture parameters can substantially affects MCP gain. Specifically, as the SEE yield peak value (δm) grows from 3 to 4, the MCP gain improves by over two orders of magnitude. Additionally, when the SEE functional layer thickness increases from 1 nm to 5 nm, δm climbs from 2.6 to 3.8, leading to an increase of MCP gain from 3 × 103 to 5 × 105. Simulation also indicates the MCP gain rises 2.3 times with every 100 V increase in bias voltage. Besides, the microchannel aspect ratio influences the MCP gain by affecting the electron collision times inside the microchannels, with simulations showing the MCP gain rises from 1.5 × 102 to 4 × 105 at 1000 V bias voltage when the aspect ratio increases from 22 to 42. This work provides a detailed discussion of the key parameters influence on MCP gain, which holds engineering significance for enhancing the MCP performance.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.