{"title":"外栅极电阻对功率型CoolMOS晶体管瞬态开关动力学的影响","authors":"Sara Laafar, Najib Boumaaz, Abdelhadi Elbacha, Badredine Lamuadni, Asmaa Maali, Abdallah Soulmani","doi":"10.1007/s10470-025-02487-w","DOIUrl":null,"url":null,"abstract":"<div><p>This study covers three complementary aspects; it focuses first on analyzing the turn-on and turn-off processes of the power CoolMOS transistor and investigating its switching times. Furthermore, it expands the scope of our previous works by validating the dynamic behaviour of the proposed model of the power CoolMOS transistor and it assesses the influence of the external gate resistance on the device’s switching performance. Simulation results for the switching characteristics were verified through experimental measurements. An experimental test was carried out using a resistive load circuit with different external gate resistance values to analyze its impact on the device’s switching behavior. The findings confirm the accuracy of the conclusions drawn from the theoretical and simulation analyses presented in this paper.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"125 1","pages":""},"PeriodicalIF":1.4000,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10470-025-02487-w.pdf","citationCount":"0","resultStr":"{\"title\":\"Impact of the external gate resistance on the power CoolMOS transistor transient switching dynamics\",\"authors\":\"Sara Laafar, Najib Boumaaz, Abdelhadi Elbacha, Badredine Lamuadni, Asmaa Maali, Abdallah Soulmani\",\"doi\":\"10.1007/s10470-025-02487-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study covers three complementary aspects; it focuses first on analyzing the turn-on and turn-off processes of the power CoolMOS transistor and investigating its switching times. Furthermore, it expands the scope of our previous works by validating the dynamic behaviour of the proposed model of the power CoolMOS transistor and it assesses the influence of the external gate resistance on the device’s switching performance. Simulation results for the switching characteristics were verified through experimental measurements. An experimental test was carried out using a resistive load circuit with different external gate resistance values to analyze its impact on the device’s switching behavior. The findings confirm the accuracy of the conclusions drawn from the theoretical and simulation analyses presented in this paper.</p></div>\",\"PeriodicalId\":7827,\"journal\":{\"name\":\"Analog Integrated Circuits and Signal Processing\",\"volume\":\"125 1\",\"pages\":\"\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-08-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s10470-025-02487-w.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Analog Integrated Circuits and Signal Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10470-025-02487-w\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Analog Integrated Circuits and Signal Processing","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10470-025-02487-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
Impact of the external gate resistance on the power CoolMOS transistor transient switching dynamics
This study covers three complementary aspects; it focuses first on analyzing the turn-on and turn-off processes of the power CoolMOS transistor and investigating its switching times. Furthermore, it expands the scope of our previous works by validating the dynamic behaviour of the proposed model of the power CoolMOS transistor and it assesses the influence of the external gate resistance on the device’s switching performance. Simulation results for the switching characteristics were verified through experimental measurements. An experimental test was carried out using a resistive load circuit with different external gate resistance values to analyze its impact on the device’s switching behavior. The findings confirm the accuracy of the conclusions drawn from the theoretical and simulation analyses presented in this paper.
期刊介绍：
Analog Integrated Circuits and Signal Processing is an archival peer reviewed journal dedicated to the design and application of analog, radio frequency (RF), and mixed signal integrated circuits (ICs) as well as signal processing circuits and systems. It features both new research results and tutorial views and reflects the large volume of cutting-edge research activity in the worldwide field today.
A partial list of topics includes analog and mixed signal interface circuits and systems; analog and RFIC design; data converters; active-RC, switched-capacitor, and continuous-time integrated filters; mixed analog/digital VLSI systems; wireless radio transceivers; clock and data recovery circuits; and high speed optoelectronic circuits and systems.
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