{"title":"等离子体损伤对串联太阳能电池互连层氧化铟锡电学和物理性能的影响","authors":"Chia-Huai Ho , Chin-Lung Cheng , Yung-Teng Wang","doi":"10.1016/j.vacuum.2025.114699","DOIUrl":null,"url":null,"abstract":"<div><div>The influence of pre-sputtering the target, sputtering power, and working pressure on the overall functional properties of indium tin oxide (ITO) films was studied. An optimized process involving a pre-sputtering treatment of the target at 5 mTorr with 20 W power for 45 min, followed by deposition of an 80 nm ITO film at 160 W and 3 mTorr, resulted in a low resistivity of 2.58 × 10<sup>−4</sup> Ω cm and a high carrier mobility of 21 cm<sup>2</sup>/V·s. When applied as an interconnecting layer on a screen-printed monocrystalline silicon solar cell (SMSSC) with an initial efficiency of 18.8 %, the ITO layer caused a 0.8 % reduction in conversion efficiency (CE). Raman spectroscopy revealed that plasma-induced damage (PID) led to a broadening of Raman peaks, highlighting its impact on ITO stability. X-ray photoelectron spectroscopy (XPS) analysis confirmed that the pre-sputtering treatment of the target effectively reduced defect-related signals, indicating improved film quality.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"241 ","pages":"Article 114699"},"PeriodicalIF":3.9000,"publicationDate":"2025-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of plasma-induced damage on electrical and physical properties of indium tin oxide as interconnecting layers of tandem solar cell applications\",\"authors\":\"Chia-Huai Ho , Chin-Lung Cheng , Yung-Teng Wang\",\"doi\":\"10.1016/j.vacuum.2025.114699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The influence of pre-sputtering the target, sputtering power, and working pressure on the overall functional properties of indium tin oxide (ITO) films was studied. An optimized process involving a pre-sputtering treatment of the target at 5 mTorr with 20 W power for 45 min, followed by deposition of an 80 nm ITO film at 160 W and 3 mTorr, resulted in a low resistivity of 2.58 × 10<sup>−4</sup> Ω cm and a high carrier mobility of 21 cm<sup>2</sup>/V·s. When applied as an interconnecting layer on a screen-printed monocrystalline silicon solar cell (SMSSC) with an initial efficiency of 18.8 %, the ITO layer caused a 0.8 % reduction in conversion efficiency (CE). Raman spectroscopy revealed that plasma-induced damage (PID) led to a broadening of Raman peaks, highlighting its impact on ITO stability. X-ray photoelectron spectroscopy (XPS) analysis confirmed that the pre-sputtering treatment of the target effectively reduced defect-related signals, indicating improved film quality.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":\"241 \",\"pages\":\"Article 114699\"},\"PeriodicalIF\":3.9000,\"publicationDate\":\"2025-08-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X2500689X\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X2500689X","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Impact of plasma-induced damage on electrical and physical properties of indium tin oxide as interconnecting layers of tandem solar cell applications
The influence of pre-sputtering the target, sputtering power, and working pressure on the overall functional properties of indium tin oxide (ITO) films was studied. An optimized process involving a pre-sputtering treatment of the target at 5 mTorr with 20 W power for 45 min, followed by deposition of an 80 nm ITO film at 160 W and 3 mTorr, resulted in a low resistivity of 2.58 × 10−4 Ω cm and a high carrier mobility of 21 cm2/V·s. When applied as an interconnecting layer on a screen-printed monocrystalline silicon solar cell (SMSSC) with an initial efficiency of 18.8 %, the ITO layer caused a 0.8 % reduction in conversion efficiency (CE). Raman spectroscopy revealed that plasma-induced damage (PID) led to a broadening of Raman peaks, highlighting its impact on ITO stability. X-ray photoelectron spectroscopy (XPS) analysis confirmed that the pre-sputtering treatment of the target effectively reduced defect-related signals, indicating improved film quality.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.