具有输入可恢复恒流VTC的0.0013-mm2 7位2-GS/s时域4位/周期SAR ADC

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhe Li, Jun Chang, Weimin Zhou, Li Dang, Hongzhi Liang, Shubin Liu
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引用次数: 0

摘要

介绍了一种高速紧凑的时域4位/周期SAR ADC。输入电压由输入可恢复恒流VTC转换成时间差。通过增强型SA-Flash TDC将时间差数字化为每周期4位。由于在VTC内采用耦合电容,可在转换后恢复输入电压,使同一个VTC和TDC在每个SAR周期内重复使用,以提高面积效率。采用单调的CDAC切换方案,在第一个周期后产生电压残差,并通过降低共模电压来加速第二个电压-时间转换。此外,通过调整放电电流,第二次转换时VTC的增益增加到第一次转换时的8倍。设计并验证了基于28纳米CMOS的单通道7位2 GS/s原型ADC。核心布局面积为0.0013 mm2。布局后仿真结果表明,在TT角的Nyquist频率输入下,SNDR和SFDR分别为42.2 dB和56.4 dB。该ADC在0.9 V电源下消耗6.7 mW,实现28.7 fJ/转换步长的fom和154.8 dB的fom。从500点失配蒙特卡罗模拟,SFDR大于46 dB, SNDR大于38.5 dB,无需校准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.0013-mm2 7-bit 2-GS/s time-domain 4-bit/cycle SAR ADC with the input-recoverable constant-current VTC
This brief presents a high-speed compact time-domain 4-bit/cycle SAR ADC. The input voltages are converted by an input-recoverable constant-current VTC into a time difference. The time difference is digitized by an enhanced SA-Flash TDC into 4-bit per cycle. Owing to the proposed coupled capacitors in the VTC, which recover the input voltage after conversion, enabling reuse of the same VTC and TDC each SAR cycle to enhance area efficiency. A monotonous CDAC switching scheme is employed to generate voltage residue after the first cycle and accelerates the second voltage-to-time conversion by decreasing the common-mode voltage. Furthermore, the gain of VTC in the second conversion is increased to eight times that of the first conversion by adjusting the discharge current. A single-channel 7-bit 2 GS/s prototype ADC is designed and verified based on 28-nm CMOS. The core layout occupies an area of 0.0013 mm2. Post-layout simulations show that SNDR and SFDR are 42.2 dB and 56.4 dB respectively at Nyquist frequency input at TT corner. The ADC consumes 6.7 mW at 0.9 V supply, achieving FoMw of 28.7 fJ/conversion-step and FoMs of 154.8 dB. From 500-point mismatch Monte Carlo simulation, SFDR above 46 dB and SNDR above 38.5 dB without calibration.
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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