太赫兹高电子迁移率晶体管特性和晶圆上测量

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-08-15 DOI:10.1016/j.mejo.2025.106846

Dong Xiong , Jing Bai , Yuan-Ting Lyu , Ao Zhang , Jian-Jun Gao

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引用次数: 0

摘要

本文提出了基于微带线结构和共面波导结构的太赫兹高电子迁移率晶体管（HEMT）的片上测量方法。设计了测量布置图结构，给出了相应的小信号等效电路模型和参数提取步骤。实验结果表明，在1 ~ 110 GHz频率范围内，模型参数与实测参数吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Terahertz high electron mobility transistor characterization and on-wafer measurement

In this paper, the on wafer measurement methods based on the micro strip line structure and coplanar waveguide structure have been developed for terahertz High Electron Mobility Transistor (HEMT). The measurement layout structures have been designed, and the corresponding small signal equivalent circuit models and parameter extraction procedures are given. The experimental results show that the S-parameters agree well between modeled and measured data in the frequency range of 1–110 GHz.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.