多组分Se-Te-Sn-In硫系玻璃陶瓷的阻抗谱

Kaushal Kumar Sarswat, Sachin Kumar Yadav, Neeraj Mehta
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引用次数: 0

摘要

本研究考察了Se78-xTe20Sn2Inx硫族玻璃陶瓷合金中铟掺入量(2%、4%和6%)在宽频率范围(0.1-500 kHz)和温度窗(300-333 K)内对电阻抗谱、复模量和温度相关电导率的影响。利用等效电路建模分析阻抗响应,揭示了从单半圆弧到双半圆弧的转变,表明晶粒和晶界区域都有贡献。观察到明显的非德拜弛豫行为和负的电阻温度系数(NTCR),突出了热激活电荷输运。由松弛时间和交流电导率得到的活化能符合Arrhenius趋势,而Meyer-Neldel规则证实了熵辅助跳变传导。最短的弛豫时间(~ 10⁻¹¹ s)和适中的活化能(0.26-0.34 eV)表明优异的介电响应性和快速极化,有利于储能和转换装置。这些结果强调了铟掺杂Se-Te-Sn玻璃作为下一代热电模块、超级电容器和固态离子导体的功能层的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Impedance spectroscopy of multicomponent Se-Te-Sn-In chalcogenide glass ceramics

Impedance spectroscopy of multicomponent Se-Te-Sn-In chalcogenide glass ceramics
The present research investigates the influence of indium incorporation (2%, 4%, and 6%) in Se78-xTe20Sn2Inx chalcogenide glass-ceramic alloys on electrical impedance spectroscopy, complex modulus, and temperature-dependent conductivity across a broad frequency range (0.1–500 kHz) and temperature window (300–333 K). The impedance response, analyzed using equivalent circuit modeling, reveals a transition from a single to a double semicircular arc, indicating contributions from both grain and grain boundary regions. A distinct non-Debye relaxation behavior and negative temperature coefficient of resistance (NTCR) are observed, highlighting thermally activated charge transport. The activation energy derived from relaxation time and AC conductivity follows Arrhenius trends, while the Meyer-Neldel rule confirms entropy-assisted hopping conduction. The shortest relaxation time (∼10⁻¹¹ s) and moderate activation energies (0.26–0.34 eV) suggest excellent dielectric responsiveness and rapid polarization, favorable for energy storage and conversion devices. These results underscore the potential of indium-doped Se-Te-Sn glasses as functional layers in next-generation thermoelectric modules, supercapacitors, and solid-state ionic conductors for energy applications.
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