Weibo Wang , Xinyu Wen , Mingze Zhang , Yiming Wang , Yongkang Zheng , Mingmao Gong , Dong Liu
{"title":"基于趋势残差分解和分位数回归的栅极感知GRU模型用于IGBT剩余使用寿命预测","authors":"Weibo Wang , Xinyu Wen , Mingze Zhang , Yiming Wang , Yongkang Zheng , Mingmao Gong , Dong Liu","doi":"10.1016/j.mejo.2025.106852","DOIUrl":null,"url":null,"abstract":"<div><div>In predicting the remaining useful life (RUL) of IGBT, the time series data (e.g., emitter-collector on-state voltage drop) characterizing the aging state of IGBT have the nonlinear characteristics of “slow change in the early stage and rapid degradation in the later stage”, and are accompanied by long-term trends and short-term disturbances, which bring challenges to the stability and prediction accuracy of traditional modeling methods. In addition, the existing RUL prediction models mostly focus on point prediction or parameter interval prediction based on distribution assumptions, which is difficult to meet the demand for quantification of prediction uncertainty and risk assessment in engineering applications. To this end, this paper proposes an improved gated recurrent network model (QT-GAGRU) based on trend-residual decomposition and quantile regression for realizing point-interval prediction of IGBT RUL. First, the trend and residual decomposition of the time series are performed and modeled separately using the sliding average method to alleviate the impact of data non-stationarity on the prediction performance; second, the input difference-based gate-aware mechanism (GAGRU) is introduced into the gated recurrent unit to enhance the model's ability of modeling the mutation features in the nonlinear degradation process; and then, for the first time, this paper incorporates the nonparametric interval prediction method -quartile regression (QR) is introduced into the IGBT RUL prediction model to achieve the quantification of model uncertainty without relying on distributional assumptions. Finally, the experimental results on self IGBT aging dataset and NASA public dataset show that the accuracy of the model is better than the existing IGBT RUL prediction models in terms of point prediction, and the interval prediction coverage is high and the interval width is small, which verifies the validity and engineering utility value of the QT-GAGRU model.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"165 ","pages":"Article 106852"},"PeriodicalIF":1.9000,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A gate-aware GRU model with trend-residual decomposition and quantile regression for remaining useful life prediction of IGBT\",\"authors\":\"Weibo Wang , Xinyu Wen , Mingze Zhang , Yiming Wang , Yongkang Zheng , Mingmao Gong , Dong Liu\",\"doi\":\"10.1016/j.mejo.2025.106852\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In predicting the remaining useful life (RUL) of IGBT, the time series data (e.g., emitter-collector on-state voltage drop) characterizing the aging state of IGBT have the nonlinear characteristics of “slow change in the early stage and rapid degradation in the later stage”, and are accompanied by long-term trends and short-term disturbances, which bring challenges to the stability and prediction accuracy of traditional modeling methods. In addition, the existing RUL prediction models mostly focus on point prediction or parameter interval prediction based on distribution assumptions, which is difficult to meet the demand for quantification of prediction uncertainty and risk assessment in engineering applications. To this end, this paper proposes an improved gated recurrent network model (QT-GAGRU) based on trend-residual decomposition and quantile regression for realizing point-interval prediction of IGBT RUL. First, the trend and residual decomposition of the time series are performed and modeled separately using the sliding average method to alleviate the impact of data non-stationarity on the prediction performance; second, the input difference-based gate-aware mechanism (GAGRU) is introduced into the gated recurrent unit to enhance the model's ability of modeling the mutation features in the nonlinear degradation process; and then, for the first time, this paper incorporates the nonparametric interval prediction method -quartile regression (QR) is introduced into the IGBT RUL prediction model to achieve the quantification of model uncertainty without relying on distributional assumptions. Finally, the experimental results on self IGBT aging dataset and NASA public dataset show that the accuracy of the model is better than the existing IGBT RUL prediction models in terms of point prediction, and the interval prediction coverage is high and the interval width is small, which verifies the validity and engineering utility value of the QT-GAGRU model.</div></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":\"165 \",\"pages\":\"Article 106852\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239125003017\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125003017","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A gate-aware GRU model with trend-residual decomposition and quantile regression for remaining useful life prediction of IGBT
In predicting the remaining useful life (RUL) of IGBT, the time series data (e.g., emitter-collector on-state voltage drop) characterizing the aging state of IGBT have the nonlinear characteristics of “slow change in the early stage and rapid degradation in the later stage”, and are accompanied by long-term trends and short-term disturbances, which bring challenges to the stability and prediction accuracy of traditional modeling methods. In addition, the existing RUL prediction models mostly focus on point prediction or parameter interval prediction based on distribution assumptions, which is difficult to meet the demand for quantification of prediction uncertainty and risk assessment in engineering applications. To this end, this paper proposes an improved gated recurrent network model (QT-GAGRU) based on trend-residual decomposition and quantile regression for realizing point-interval prediction of IGBT RUL. First, the trend and residual decomposition of the time series are performed and modeled separately using the sliding average method to alleviate the impact of data non-stationarity on the prediction performance; second, the input difference-based gate-aware mechanism (GAGRU) is introduced into the gated recurrent unit to enhance the model's ability of modeling the mutation features in the nonlinear degradation process; and then, for the first time, this paper incorporates the nonparametric interval prediction method -quartile regression (QR) is introduced into the IGBT RUL prediction model to achieve the quantification of model uncertainty without relying on distributional assumptions. Finally, the experimental results on self IGBT aging dataset and NASA public dataset show that the accuracy of the model is better than the existing IGBT RUL prediction models in terms of point prediction, and the interval prediction coverage is high and the interval width is small, which verifies the validity and engineering utility value of the QT-GAGRU model.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.