A CMOS rectifier with wide power dynamic range based on adaptive body bias compensation technique for radio frequency energy harvesting

This paper presents a novel CMOS rectifier with wide power dynamic range (WPDR) for radio frequency energy harvesting (RFEH). In the proposed structure, an adaptive body bias compensation (ABBC) technique is employed to extend the rectifier’s power dynamic range. This is because the ABBC technique can be used to make the main rectifying transistors’ threshold voltage can be dynamically adjusted according to the input power variations. The proposed ABBC-based rectifier is equivalent to a conventional cross-coupled (CC) rectifier when the input power is low. Thus, in this case, the proposed rectifier achieves a good power conversion efficiency (PCE). On the contrary, the proposed ABBC technique can increase the threshold voltage of the main rectifying transistors when it has a high input power. Therefore, it also has a good PCE when the input power is high. For validation, we design a 433 MHz rectifier in a standard 0.13 $\mu$m CMOS process. The post-simulated results show that it achieves a 83.6 % peak PCE and a -19.1 dBm sensitivity. Besides, its dynamic range (DR) for PCE >40% and PCE> 20% with a 100 k$\Omega$ load ($R_L$) are 15.1 dB and 26.4 dB, respectively.