半导体Eu2InSnP3的独特结构类型和反铁磁有序

IF 7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Mebatsion S. Gebre, Zhihao Jiang, Zachary W. Riedel, Emma A. Pappas, Honghui Zhou, André Schleife and Daniel P. Shoemaker*, 
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引用次数: 0

摘要

由主族元素组成的含稀土三元化合物占据了一个化学空间,在那里它们可以跨越绝缘到金属行为,并且它们通常表现出低维结构,其中磁有序可以通过中等磁场调谐。研究了半金属EuIn2P2和euusn2p2之间的化合物,形成了有序的四元相Eu2InSnP3,它形成于正交空间群Pnma中。Eu2InSnP3中的Eu2+离子形成了一种边缘共享的EuP6八面体的荷兰状通道矩阵。这些Eu2+将电子提供给[InSnP3]4 -聚阴离子,该聚阴离子表现出独特的in - sn键,以维持Zintl框架中的电荷平衡。这种键合要求和我们不同化学计量的实验合成尝试表明,In和Sn是完全有序的,导致半导体行为。第一线原理模拟发现最小的带隙约为0.5 eV,但能量接近于直接带隙。Eu2InSnP3的磁性行为在TN = 12 K时表现出低场反铁磁有序,在2k时表现出0.8 T左右的自旋跳变。磁态的进展是复杂的,但可以通过考虑化合物中两个不相等磁位的连通性和4f7 Eu2+离子的低各向异性来确定。总之,共价In - sn键打开半导体间隙的能力证明了这些化合物中微妙的相互作用以及它们表现出不寻常结构基序的倾向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Unique Structure Type and Antiferromagnetic Ordering in Semiconducting Eu2InSnP3

Unique Structure Type and Antiferromagnetic Ordering in Semiconducting Eu2InSnP3

Rare-earth-containing ternary pnictides formed with main group elements occupy a chemical space where they can span insulating to metallic behavior, and they often exhibit low-dimensional structures where magnetic ordering can be tuned by moderate fields. Investigating compounds between semimetallic EuIn2P2 and EuSn2P2 led to the formation of an ordered quaternary phase Eu2InSnP3, which forms in the orthorhombic space group Pnma. The Eu2+ ions in Eu2InSnP3 form a hollandite-like channeled matrix of edge-sharing EuP6 octahedra. These Eu2+ donate electrons to a [InSnP3]4– polyanion which exhibits a distinct In–Sn bond to maintain charge balance in the Zintl framework. This bonding requirement and our experimental synthesis attempts with varying stoichiometries indicate that the In and Sn are fully ordered, leading to semiconducting behavior. First-principles simulations find the smallest band gap to be indirect of about 0.5 eV, but close in energy to a direct gap. The magnetic behavior of Eu2InSnP3 shows a low-field antiferromagnetic ordering at TN = 12 K and a spin-flop transition around 0.8 T at 2 K. The progression of magnetic states is complex, but can be ascertained by considering the connectivity of the two inequivalent magnetic sites in the compound and the low anisotropy of the 4f7 Eu2+ ion. In all, the ability of covalent In–Sn bonding to open a semiconducting gap is evidence of the delicate interactions in these compounds and their propensity to exhibit uncommon structural motifs.

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来源期刊
Chemistry of Materials
Chemistry of Materials 工程技术-材料科学:综合
CiteScore
14.10
自引率
5.80%
发文量
929
审稿时长
1.5 months
期刊介绍: The journal Chemistry of Materials focuses on publishing original research at the intersection of materials science and chemistry. The studies published in the journal involve chemistry as a prominent component and explore topics such as the design, synthesis, characterization, processing, understanding, and application of functional or potentially functional materials. The journal covers various areas of interest, including inorganic and organic solid-state chemistry, nanomaterials, biomaterials, thin films and polymers, and composite/hybrid materials. The journal particularly seeks papers that highlight the creation or development of innovative materials with novel optical, electrical, magnetic, catalytic, or mechanical properties. It is essential that manuscripts on these topics have a primary focus on the chemistry of materials and represent a significant advancement compared to prior research. Before external reviews are sought, submitted manuscripts undergo a review process by a minimum of two editors to ensure their appropriateness for the journal and the presence of sufficient evidence of a significant advance that will be of broad interest to the materials chemistry community.
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