{"title":"用于神经形态计算的高熵氧化物记忆电阻器:从材料工程到功能集成","authors":"Jia-Li Yang, Xin-Gui Tang, Xuan Gu, Qi-Jun Sun, Zhen-Hua Tang, Wen-Hua Li, Yan-Ping Jiang","doi":"10.1007/s40820-025-01891-1","DOIUrl":null,"url":null,"abstract":"<div><h2>Highlights</h2><div>\n \n <ul>\n <li>\n <p>Comprehensive overview of high-entropy oxides (HEOs) in memristive devices, emphasizing their potential in neuromorphic computing and their ability to simulate synaptic plasticity and multilevel conductance modulation.</p>\n </li>\n <li>\n <p>Detailed exploration of resistive switching mechanisms in HEO-based memristors, focusing on vacancy migration, phase transitions, and valence-state dynamics, which underpin their performance in brain-inspired electronics.</p>\n </li>\n <li>\n <p>Insightful discussion on the challenges and opportunities for integrating HEO-based memristors into large-scale neuromorphic systems, highlighting the need for advancements in material design, interface optimization, and scalability.</p>\n </li>\n </ul>\n </div></div>","PeriodicalId":714,"journal":{"name":"Nano-Micro Letters","volume":"18 1","pages":""},"PeriodicalIF":36.3000,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40820-025-01891-1.pdf","citationCount":"0","resultStr":"{\"title\":\"High-Entropy Oxide Memristors for Neuromorphic Computing: From Material Engineering to Functional Integration\",\"authors\":\"Jia-Li Yang, Xin-Gui Tang, Xuan Gu, Qi-Jun Sun, Zhen-Hua Tang, Wen-Hua Li, Yan-Ping Jiang\",\"doi\":\"10.1007/s40820-025-01891-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><h2>Highlights</h2><div>\\n \\n <ul>\\n <li>\\n <p>Comprehensive overview of high-entropy oxides (HEOs) in memristive devices, emphasizing their potential in neuromorphic computing and their ability to simulate synaptic plasticity and multilevel conductance modulation.</p>\\n </li>\\n <li>\\n <p>Detailed exploration of resistive switching mechanisms in HEO-based memristors, focusing on vacancy migration, phase transitions, and valence-state dynamics, which underpin their performance in brain-inspired electronics.</p>\\n </li>\\n <li>\\n <p>Insightful discussion on the challenges and opportunities for integrating HEO-based memristors into large-scale neuromorphic systems, highlighting the need for advancements in material design, interface optimization, and scalability.</p>\\n </li>\\n </ul>\\n </div></div>\",\"PeriodicalId\":714,\"journal\":{\"name\":\"Nano-Micro Letters\",\"volume\":\"18 1\",\"pages\":\"\"},\"PeriodicalIF\":36.3000,\"publicationDate\":\"2025-08-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s40820-025-01891-1.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano-Micro Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40820-025-01891-1\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano-Micro Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s40820-025-01891-1","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Engineering","Score":null,"Total":0}
High-Entropy Oxide Memristors for Neuromorphic Computing: From Material Engineering to Functional Integration
Highlights
Comprehensive overview of high-entropy oxides (HEOs) in memristive devices, emphasizing their potential in neuromorphic computing and their ability to simulate synaptic plasticity and multilevel conductance modulation.
Detailed exploration of resistive switching mechanisms in HEO-based memristors, focusing on vacancy migration, phase transitions, and valence-state dynamics, which underpin their performance in brain-inspired electronics.
Insightful discussion on the challenges and opportunities for integrating HEO-based memristors into large-scale neuromorphic systems, highlighting the need for advancements in material design, interface optimization, and scalability.
期刊介绍:
Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand.
Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields.
Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.