基于一步水热合成SnO2/Zn2SnO4复合材料的高性能自供电紫外光电探测器

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Furui Li, Songchi Liao, Junyu Su, Bowen Li, Huan He, Yuechun Fu
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引用次数: 0

摘要

本文采用简单的一步水热法合成了SnO2/Zn2SnO4复合材料,构建了高性能的自供电紫外光电探测器。SnO2纳米针分布在Zn2SnO4纳米片表面,呈现出良好的异质界面和ii型能带结构。与纯Zn2SnO4相比,SnO2/Zn2SnO4复合材料具有较高的紫外吸光度和电荷转移能力。在紫外光照射下,基于SnO2/Zn2SnO4复合材料和ITO导电电极的光电探测器显示出稳定和可重复的自供电特性。ZS11基光电探测器在最佳Zn:Sn摩尔比为1:1的条件下,探测率最高,为3.96 × 1011 Jones,这归因于SnO2对Zn2SnO4的形态和能带调节。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

High-performance self-powered UV photodetector based on SnO2/Zn2SnO4 composites from one-step hydrothermal synthesis

High-performance self-powered UV photodetector based on SnO2/Zn2SnO4 composites from one-step hydrothermal synthesis

High-performance self-powered UV photodetector based on SnO2/Zn2SnO4 composites from one-step hydrothermal synthesis

In this work, SnO2/Zn2SnO4 composites were synthesized by a simple one-step hydrothermal method to construct a high-performance self-powered UV photodetector. SnO2 nanoneedles are distributed on the surface of Zn2SnO4 nanosheets, and they show well-formed heterointerface and type-II band structure. Compared with pure Zn2SnO4, SnO2/Zn2SnO4 composites display the relatively higher UV light absorbance and charge transfer capability. Under UV illumination, the photodetectors based on SnO2/Zn2SnO4 composites and ITO conductive electrode display stable and repeatable self-powered characteristics. With an optimal Zn:Sn molar ratio of 1:1 in the reactants, ZS11 based photodetector shows the highest detectivity of 3.96 × 1011 Jones, which is ascribed to the morphology and energy band regulations of Zn2SnO4 by SnO2.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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