溶胶-凝胶法制备掺杂和共掺杂碱金属(Li、Na、K)的CZTS (Cu₂ZnSnS₄)薄膜

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ramadan Aliti, Yoganash Putthisigamany, Puvaneswaran Chelvanathan, Mimoza Ristova
{"title":"溶胶-凝胶法制备掺杂和共掺杂碱金属(Li、Na、K)的CZTS (Cu₂ZnSnS₄)薄膜","authors":"Ramadan Aliti,&nbsp;Yoganash Putthisigamany,&nbsp;Puvaneswaran Chelvanathan,&nbsp;Mimoza Ristova","doi":"10.1007/s10854-025-15571-8","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, we present the synthesis and characterisation of Cu₂ZnSnS₄ (CZTS) thin films—undoped, singly doped, and co-doped with alkali metals (Li, Na, and K), where 1.5% of the Cu atoms were substituted. The investigation focused on analysing and comparing the stoichiometry, morphology, crystalline structure, and optical and electrical properties as influenced by individual dopants (Li, Na, K) and their binary combinations (LiNa, LiK, and NaK). To date, no study has systematically explored the effects of both single and co-doping of CZTS films with alkali metals using a single deposition technique. This work addresses that gap by providing a comparative analysis of the impact of all three alkali metals—both individually and in binary combinations—using a consistent spin-coating method. SEM/EDX analysis revealed uniform surfaces across all doped samples, with notable variations in surface morphology and porosity depending on the specific dopant. The elemental content of the films exhibited slight Cu enrichment and Sn and S deficiency. XRD patterns and the calculated lattice parameters (a, c) remained within the theoretical and experimental ranges characteristic of tetragonal kesterite/stannite CZTS structures, regardless of the dopant. Doping led to increased micro-strain and a reduction in crystallite size, from approximately 78 nm in pristine CZTS to around 50 nm in the NaK co-doped sample. Raman spectroscopy confirmed the CZTS phase, showing the characteristic A vibrational modes of the most common kesterite structure around 284 cm⁻<sup>1</sup> and 330 cm⁻<sup>1</sup>. Optical analysis demonstrated a significant effect of doping on the bandgap, which decreased from 1.45 eV for the undoped film to a range of 1.43–1.28 eV for the doped samples. Changes in carrier type (n- or p-type) were primarily observed in Cu-rich and Sn-poor films, particularly in the undoped and LiNa co-doped samples. Overall, the results show that alkali metal doping has a pronounced impact on the structural, optical, and electrical properties of CZTS thin films.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 24","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sol–gel prepared CZTS (Cu₂ZnSnS₄) films doped and co-doped with alkali metals (Li, Na and K)\",\"authors\":\"Ramadan Aliti,&nbsp;Yoganash Putthisigamany,&nbsp;Puvaneswaran Chelvanathan,&nbsp;Mimoza Ristova\",\"doi\":\"10.1007/s10854-025-15571-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, we present the synthesis and characterisation of Cu₂ZnSnS₄ (CZTS) thin films—undoped, singly doped, and co-doped with alkali metals (Li, Na, and K), where 1.5% of the Cu atoms were substituted. The investigation focused on analysing and comparing the stoichiometry, morphology, crystalline structure, and optical and electrical properties as influenced by individual dopants (Li, Na, K) and their binary combinations (LiNa, LiK, and NaK). To date, no study has systematically explored the effects of both single and co-doping of CZTS films with alkali metals using a single deposition technique. This work addresses that gap by providing a comparative analysis of the impact of all three alkali metals—both individually and in binary combinations—using a consistent spin-coating method. SEM/EDX analysis revealed uniform surfaces across all doped samples, with notable variations in surface morphology and porosity depending on the specific dopant. The elemental content of the films exhibited slight Cu enrichment and Sn and S deficiency. XRD patterns and the calculated lattice parameters (a, c) remained within the theoretical and experimental ranges characteristic of tetragonal kesterite/stannite CZTS structures, regardless of the dopant. Doping led to increased micro-strain and a reduction in crystallite size, from approximately 78 nm in pristine CZTS to around 50 nm in the NaK co-doped sample. Raman spectroscopy confirmed the CZTS phase, showing the characteristic A vibrational modes of the most common kesterite structure around 284 cm⁻<sup>1</sup> and 330 cm⁻<sup>1</sup>. Optical analysis demonstrated a significant effect of doping on the bandgap, which decreased from 1.45 eV for the undoped film to a range of 1.43–1.28 eV for the doped samples. Changes in carrier type (n- or p-type) were primarily observed in Cu-rich and Sn-poor films, particularly in the undoped and LiNa co-doped samples. Overall, the results show that alkali metal doping has a pronounced impact on the structural, optical, and electrical properties of CZTS thin films.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 24\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-08-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-15571-8\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15571-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

在这项研究中,我们提出了Cu₂ZnSnS₄(CZTS)薄膜的合成和表征-不掺杂,单掺杂和共掺杂碱金属(Li, Na和K),其中1.5%的Cu原子被取代。研究的重点是分析和比较单个掺杂剂(Li, Na, K)和它们的二元组合(LiNa, LiK和NaK)对化学计量学、形貌、晶体结构、光学和电学性能的影响。迄今为止,还没有研究系统地探讨了使用单一沉积技术单独或共掺杂碱金属的CZTS薄膜的影响。这项工作通过使用一致的旋转涂层方法,对所有三种碱金属(无论是单独的还是二元组合的)的影响进行比较分析,解决了这一差距。SEM/EDX分析显示,所有掺杂样品的表面都是均匀的,表面形貌和孔隙率根据掺杂的不同而有显著的变化。膜的元素含量表现为轻微的Cu富集和Sn、S缺乏。无论掺杂与否,XRD谱图和计算的晶格参数(a, c)都保持在方形kesterite/stannite CZTS结构的理论和实验范围内。掺杂导致微应变增加和晶体尺寸减小,从原始CZTS的约78 nm到NaK共掺杂样品的约50 nm。拉曼光谱证实了CZTS相,显示了最常见的kesterite结构在284 cm⁻1和330 cm⁻1左右的特征A振动模式。光学分析表明,掺杂对带隙有显著影响,从未掺杂薄膜的1.45 eV降低到掺杂样品的1.43-1.28 eV。载流子类型(n型或p型)的变化主要在富cu和贫sn薄膜中观察到,特别是在未掺杂和LiNa共掺杂样品中。综上所述,碱金属掺杂对CZTS薄膜的结构、光学和电学性能都有显著的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sol–gel prepared CZTS (Cu₂ZnSnS₄) films doped and co-doped with alkali metals (Li, Na and K)

In this study, we present the synthesis and characterisation of Cu₂ZnSnS₄ (CZTS) thin films—undoped, singly doped, and co-doped with alkali metals (Li, Na, and K), where 1.5% of the Cu atoms were substituted. The investigation focused on analysing and comparing the stoichiometry, morphology, crystalline structure, and optical and electrical properties as influenced by individual dopants (Li, Na, K) and their binary combinations (LiNa, LiK, and NaK). To date, no study has systematically explored the effects of both single and co-doping of CZTS films with alkali metals using a single deposition technique. This work addresses that gap by providing a comparative analysis of the impact of all three alkali metals—both individually and in binary combinations—using a consistent spin-coating method. SEM/EDX analysis revealed uniform surfaces across all doped samples, with notable variations in surface morphology and porosity depending on the specific dopant. The elemental content of the films exhibited slight Cu enrichment and Sn and S deficiency. XRD patterns and the calculated lattice parameters (a, c) remained within the theoretical and experimental ranges characteristic of tetragonal kesterite/stannite CZTS structures, regardless of the dopant. Doping led to increased micro-strain and a reduction in crystallite size, from approximately 78 nm in pristine CZTS to around 50 nm in the NaK co-doped sample. Raman spectroscopy confirmed the CZTS phase, showing the characteristic A vibrational modes of the most common kesterite structure around 284 cm⁻1 and 330 cm⁻1. Optical analysis demonstrated a significant effect of doping on the bandgap, which decreased from 1.45 eV for the undoped film to a range of 1.43–1.28 eV for the doped samples. Changes in carrier type (n- or p-type) were primarily observed in Cu-rich and Sn-poor films, particularly in the undoped and LiNa co-doped samples. Overall, the results show that alkali metal doping has a pronounced impact on the structural, optical, and electrical properties of CZTS thin films.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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