用于增强短波红外探测与成像的硅基黑色GeSn。抛光工艺。16/2025)

IF 6.4 3区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Materials Technologies Pub Date : 2025-08-22 DOI:10.1002/admt.70224

Po-Rei Huang, Yue-Tong Jheng, Ting-Yu Chen, Guo-En Chang

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引用次数: 0

摘要

短波红外探测器在文章编号2401524中，张国恩及其同事提出了一种基于Si上全族iv黑色GeSn表面的新型互补金属氧化物半导体（CMOS）兼容短波红外探测器和图像。GeSn表面的黑化大大减少了反射损耗和载流子倍增，从而大大提高了探测率，增强了广角SWIR光探测能力，提高了所得图像的质量。

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Black GeSn on Silicon for Enhanced Short-Wave Infrared Detection and Imaging (Adv. Mater. Technol. 16/2025)

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Black GeSn on Silicon for Enhanced Short-Wave Infrared Detection and Imaging (Adv. Mater. Technol. 16/2025)

Short-Wave Infrared Photodetectors

In article number 2401524, Guo-En Chang and co-workers present an innovative complementary metal-oxide semiconductor (CMOS)-compatible shortwave infrared photodetectors and images based on all-group-IV black GeSn surfaces on Si. The blackening of the GeSn surface achieves a substantial reduction of reflection loss and carrier multiplication, which substantially boosts the detectivity, enhances the wide-angle SWIR photodetection, and improves the quality of the resultant images.

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来源期刊

Advanced Materials Technologies Materials Science-General Materials Science

CiteScore

10.20

自引率

4.40%

发文量

566

期刊介绍： Advanced Materials Technologies Advanced Materials Technologies is the new home for all technology-related materials applications research, with particular focus on advanced device design, fabrication and integration, as well as new technologies based on novel materials. It bridges the gap between fundamental laboratory research and industry.