一种高速大功率mutc - pd光场分布调谐方法

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shuhu Tan, Yongqing Huang, Xuejie Wang, Mingxi Yang, Jihong Ye, Kai Liu, Xiaofeng Duan, Xiaomin Ren
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引用次数: 0

摘要

为了提高MUTC光电二极管的线性度,提出了一种在固定光功率下优化光纤耦合距离的方法。这种方法将光电流降低到其最大值的80%,从而减轻了由光场高斯分布引起的饱和。它在吸收层中实现了均匀的径向电子浓度,抑制了空间电荷效应。因此,30 GHz的峰值射频输出功率在所有器件尺寸下都得到了增强:20 μm、18 μm和15 μm器件的值分别从15.87 dBm、14.15 dBm和12.2 dBm增加到17.07 dBm、15.6 dBm和14.57 dBm。对封装的20 μm MUTC光电二极管模块进行了评估,在−4 V和−5 V的偏置下,30 GHz时的峰值射频输出功率分别为8.24 dBm和12.51 dBm。本研究建立了一种实用的策略,通过精确的光纤耦合控制来优化mutc - pd的线性度和带宽,证明了其在抑制非线性和改善高频工作方面的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An approach for tuning optical field distribution in high-speed and high-power MUTC-PDs

To enhance the linearity of MUTC photodiode, an approach optimizing the fiber coupling distance under fixed optical power is proposed. This approach reduces the photocurrent to 80% of its maximum value, thereby mitigating saturation caused by the Gaussian distribution of the optical field. It achieves a uniform radial electron concentration in the absorption layer and suppresses space charge effects. Consequently, the peak RF output power at 30 GHz was enhanced for all device sizes: the values for the 20 μm, 18 μm, and 15 μm devices increased from 15.87 dBm, 14.15 dBm, and 12.2 dBm to 17.07 dBm, 15.6 dBm, and 14.57 dBm, respectively. A packaged 20 μm MUTC photodiode module was evaluated, yielding peak RF output powers of 8.24 dBm and 12.51 dBm at 30 GHz under biases of − 4 V and − 5 V, respectively. This study establishes a practical strategy for optimizing linearity and bandwidth in MUTC-PDs through precise fiber coupling control, demonstrating its effectiveness in suppressing nonlinearities and improving high-frequency operation.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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