Fatih Ünal, Mümin Mehmet Koç, Sitki Aktas, Burhan Coşkun, Mustafa Şükrü Kurt, Mahmut Gür, Tayfun Arslan
{"title":"Ag/MnPc/Si/Ag和Ag/MnPc/SiO2/Ag异质结的光电二极管和光电探测器特性","authors":"Fatih Ünal, Mümin Mehmet Koç, Sitki Aktas, Burhan Coşkun, Mustafa Şükrü Kurt, Mahmut Gür, Tayfun Arslan","doi":"10.1007/s10854-025-15575-4","DOIUrl":null,"url":null,"abstract":"<div><p>Manganese (III) phthalocyanine (4) (modified MnPc) was synthesized by tetramerization of the relevant phthalonitrile under appropriate conditions and thermally coated on Si and SiO<sub>2</sub> coated surfaces for the preparation of Ag/MnPc/Si/Ag and Ag/MnPc/SiO<sub>2</sub>/Ag heterojunctions. Series of investigation methods were applied to assess structural, optical and optoelectronic properties. For the assessment of surface morphology and structure, scanning electron microscopy (SEM) and X-ray diffractometry (XRD) techniques were applied, respectively. Optical properties were evaluated using UV–vis spectrophotometry where energy band gap of the MnPc, Si and SiO<sub>2</sub> thin films were derived as 2.46 eV, 2.79 eV and 2.6 eV, respectively. I-V investigation was employed in dark and under various illumination intensities in 20 mW.cm<sup>−2</sup>, 40 mW.cm<sup>−2</sup>, 60 mW.cm<sup>−2</sup>, 80 mW.cm<sup>−2</sup> and 100 mW.cm<sup>−2</sup>. Using I-V data different device parameters like ideality factor, serries resistance and barrier height values were derived. Besides various photodetector and photosensitivity parameters were calculated. It was seen that Ag/MnPc/Si/Ag and Ag/MnPc/SiO<sub>2</sub>/Ag heterojunctions are sensitive to light but no direct correlation between light intensity and diode parameters were seen.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 23","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photodiode and photodetector characteristics of Ag/MnPc/Si/Ag and Ag/MnPc/SiO2/Ag heterojunctions\",\"authors\":\"Fatih Ünal, Mümin Mehmet Koç, Sitki Aktas, Burhan Coşkun, Mustafa Şükrü Kurt, Mahmut Gür, Tayfun Arslan\",\"doi\":\"10.1007/s10854-025-15575-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Manganese (III) phthalocyanine (4) (modified MnPc) was synthesized by tetramerization of the relevant phthalonitrile under appropriate conditions and thermally coated on Si and SiO<sub>2</sub> coated surfaces for the preparation of Ag/MnPc/Si/Ag and Ag/MnPc/SiO<sub>2</sub>/Ag heterojunctions. Series of investigation methods were applied to assess structural, optical and optoelectronic properties. For the assessment of surface morphology and structure, scanning electron microscopy (SEM) and X-ray diffractometry (XRD) techniques were applied, respectively. Optical properties were evaluated using UV–vis spectrophotometry where energy band gap of the MnPc, Si and SiO<sub>2</sub> thin films were derived as 2.46 eV, 2.79 eV and 2.6 eV, respectively. I-V investigation was employed in dark and under various illumination intensities in 20 mW.cm<sup>−2</sup>, 40 mW.cm<sup>−2</sup>, 60 mW.cm<sup>−2</sup>, 80 mW.cm<sup>−2</sup> and 100 mW.cm<sup>−2</sup>. Using I-V data different device parameters like ideality factor, serries resistance and barrier height values were derived. Besides various photodetector and photosensitivity parameters were calculated. It was seen that Ag/MnPc/Si/Ag and Ag/MnPc/SiO<sub>2</sub>/Ag heterojunctions are sensitive to light but no direct correlation between light intensity and diode parameters were seen.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 23\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-08-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-15575-4\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15575-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Photodiode and photodetector characteristics of Ag/MnPc/Si/Ag and Ag/MnPc/SiO2/Ag heterojunctions
Manganese (III) phthalocyanine (4) (modified MnPc) was synthesized by tetramerization of the relevant phthalonitrile under appropriate conditions and thermally coated on Si and SiO2 coated surfaces for the preparation of Ag/MnPc/Si/Ag and Ag/MnPc/SiO2/Ag heterojunctions. Series of investigation methods were applied to assess structural, optical and optoelectronic properties. For the assessment of surface morphology and structure, scanning electron microscopy (SEM) and X-ray diffractometry (XRD) techniques were applied, respectively. Optical properties were evaluated using UV–vis spectrophotometry where energy band gap of the MnPc, Si and SiO2 thin films were derived as 2.46 eV, 2.79 eV and 2.6 eV, respectively. I-V investigation was employed in dark and under various illumination intensities in 20 mW.cm−2, 40 mW.cm−2, 60 mW.cm−2, 80 mW.cm−2 and 100 mW.cm−2. Using I-V data different device parameters like ideality factor, serries resistance and barrier height values were derived. Besides various photodetector and photosensitivity parameters were calculated. It was seen that Ag/MnPc/Si/Ag and Ag/MnPc/SiO2/Ag heterojunctions are sensitive to light but no direct correlation between light intensity and diode parameters were seen.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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