Mikhail N. Palatnikov, Irina V. Biryukova, Roman A. Titov, Natalya A. Teplyakova, Lubov A. Bobreva, Ilija N. Efremov, Olga V. Palatnikova, Nikolay V. Sidorov
{"title":"LiNbO3:Zn: B晶体缺陷结构及光学性质的制备与表征","authors":"Mikhail N. Palatnikov, Irina V. Biryukova, Roman A. Titov, Natalya A. Teplyakova, Lubov A. Bobreva, Ilija N. Efremov, Olga V. Palatnikova, Nikolay V. Sidorov","doi":"10.1007/s11082-025-08357-z","DOIUrl":null,"url":null,"abstract":"<div><p>Four double doped LiNbO<sub>3</sub>:Zn: B crystals has been grown from a melt containing ~ 1.5 mol% B and ~ 5.24–7.40 mol% ZnO by the Czochralski. The concentration dependences of the physico-chemical characteristics of LiNbO<sub>3</sub>:Zn: B did not show any “threshold” effects during crystal growth. These effects are observed in single doped LiNbO<sub>3</sub>:Zn crystals in the concentration range of ~ 6.8 mol% ZnO in the melt. Weak anomalies have been detected on the concentration dependences of the content of OH groups and quantitative characteristics of microstructure in LiNbO<sub>3</sub>:Zn: B crystals in this region of ZnO concentrations in the melt. The amount of zinc incorporated in LiNbO<sub>3</sub>:Zn: B crystals was ~ 22–28% less than incorporated in LiNbO<sub>3</sub>:Zn crystals with a similar zinc content in the melt. This is caused by a change in the structure of the melt in the presence of a strong complexing agent boron. The macro- and microdefect structure of LiNbO<sub>3</sub>:Zn: B crystals has been studied in detail by optical microscopy and compared with that of LiNbO<sub>3</sub>:Zn and LiNbO<sub>3</sub>:B crystals. It has been established that in LiNbO<sub>3</sub>:Zn: B crystals, in contrast to LiNbO<sub>3</sub>:Zn crystals, the second phases do not segregate at high concentrations of zinc in the melt.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation and features of defective structure and optical properties of LiNbO3:Zn: B crystals\",\"authors\":\"Mikhail N. Palatnikov, Irina V. Biryukova, Roman A. Titov, Natalya A. Teplyakova, Lubov A. Bobreva, Ilija N. Efremov, Olga V. Palatnikova, Nikolay V. Sidorov\",\"doi\":\"10.1007/s11082-025-08357-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Four double doped LiNbO<sub>3</sub>:Zn: B crystals has been grown from a melt containing ~ 1.5 mol% B and ~ 5.24–7.40 mol% ZnO by the Czochralski. The concentration dependences of the physico-chemical characteristics of LiNbO<sub>3</sub>:Zn: B did not show any “threshold” effects during crystal growth. These effects are observed in single doped LiNbO<sub>3</sub>:Zn crystals in the concentration range of ~ 6.8 mol% ZnO in the melt. Weak anomalies have been detected on the concentration dependences of the content of OH groups and quantitative characteristics of microstructure in LiNbO<sub>3</sub>:Zn: B crystals in this region of ZnO concentrations in the melt. The amount of zinc incorporated in LiNbO<sub>3</sub>:Zn: B crystals was ~ 22–28% less than incorporated in LiNbO<sub>3</sub>:Zn crystals with a similar zinc content in the melt. This is caused by a change in the structure of the melt in the presence of a strong complexing agent boron. The macro- and microdefect structure of LiNbO<sub>3</sub>:Zn: B crystals has been studied in detail by optical microscopy and compared with that of LiNbO<sub>3</sub>:Zn and LiNbO<sub>3</sub>:B crystals. It has been established that in LiNbO<sub>3</sub>:Zn: B crystals, in contrast to LiNbO<sub>3</sub>:Zn crystals, the second phases do not segregate at high concentrations of zinc in the melt.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"57 9\",\"pages\":\"\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2025-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-025-08357-z\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08357-z","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Preparation and features of defective structure and optical properties of LiNbO3:Zn: B crystals
Four double doped LiNbO3:Zn: B crystals has been grown from a melt containing ~ 1.5 mol% B and ~ 5.24–7.40 mol% ZnO by the Czochralski. The concentration dependences of the physico-chemical characteristics of LiNbO3:Zn: B did not show any “threshold” effects during crystal growth. These effects are observed in single doped LiNbO3:Zn crystals in the concentration range of ~ 6.8 mol% ZnO in the melt. Weak anomalies have been detected on the concentration dependences of the content of OH groups and quantitative characteristics of microstructure in LiNbO3:Zn: B crystals in this region of ZnO concentrations in the melt. The amount of zinc incorporated in LiNbO3:Zn: B crystals was ~ 22–28% less than incorporated in LiNbO3:Zn crystals with a similar zinc content in the melt. This is caused by a change in the structure of the melt in the presence of a strong complexing agent boron. The macro- and microdefect structure of LiNbO3:Zn: B crystals has been studied in detail by optical microscopy and compared with that of LiNbO3:Zn and LiNbO3:B crystals. It has been established that in LiNbO3:Zn: B crystals, in contrast to LiNbO3:Zn crystals, the second phases do not segregate at high concentrations of zinc in the melt.
期刊介绍：
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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