Zexin Su;Chang Liu;Xuan Zhang;Qian Luo;Liu Wang;Sheng Hu;Xiao Ma;Bo Li
{"title":"采用不平衡中和技术的38ghz差分跨阻放大器","authors":"Zexin Su;Chang Liu;Xuan Zhang;Qian Luo;Liu Wang;Sheng Hu;Xiao Ma;Bo Li","doi":"10.1109/LMWT.2025.3561787","DOIUrl":null,"url":null,"abstract":"In this letter, a broadband, low-noise and low-mismatch differential transimpedance amplifier (TIA) is proposed. In the classical single-ended-to-differential (S2D) strategy of TIA for mismatch reduction, the strong path and the weak path compensate each other, which results in low mismatch output differential signals. However, due to the different input strength of the strong and weak signals but the same gains of amplifier’s differential branches, mismatches could not eliminate well. To address this problem, an unbalanced neutralizing technique (UNT) is proposed. A single-sided negative capacitance feedback capacitor is introduced to strengthen the weak-side signal. Additionally, the design employs a combination of the high-gain input-stage and gain peaking in the subsequent stage to achieve improved bandwidth and noise performance simultaneously. Fabricated by 28-nm CMOS process, the chip achieves a transimpedance (TI) gain of 66.4 dB<inline-formula> <tex-math>$\\Omega $ </tex-math></inline-formula> across a 3-dB bandwidth of 38.8 GHz. The power consumption is 49 mW (including buffer). The averaged input-referred current noise density is 16.3 pA/<inline-formula> <tex-math>$\\sqrt {\\mathrm {Hz}}$ </tex-math></inline-formula>. The total active area of the chip is 0.08 mm<sup>2</sup>.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 8","pages":"1218-1221"},"PeriodicalIF":3.4000,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 38-GHz Differential Transimpedance Amplifier With Unbalanced Neutralizing Technique\",\"authors\":\"Zexin Su;Chang Liu;Xuan Zhang;Qian Luo;Liu Wang;Sheng Hu;Xiao Ma;Bo Li\",\"doi\":\"10.1109/LMWT.2025.3561787\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, a broadband, low-noise and low-mismatch differential transimpedance amplifier (TIA) is proposed. In the classical single-ended-to-differential (S2D) strategy of TIA for mismatch reduction, the strong path and the weak path compensate each other, which results in low mismatch output differential signals. However, due to the different input strength of the strong and weak signals but the same gains of amplifier’s differential branches, mismatches could not eliminate well. To address this problem, an unbalanced neutralizing technique (UNT) is proposed. A single-sided negative capacitance feedback capacitor is introduced to strengthen the weak-side signal. Additionally, the design employs a combination of the high-gain input-stage and gain peaking in the subsequent stage to achieve improved bandwidth and noise performance simultaneously. Fabricated by 28-nm CMOS process, the chip achieves a transimpedance (TI) gain of 66.4 dB<inline-formula> <tex-math>$\\\\Omega $ </tex-math></inline-formula> across a 3-dB bandwidth of 38.8 GHz. The power consumption is 49 mW (including buffer). The averaged input-referred current noise density is 16.3 pA/<inline-formula> <tex-math>$\\\\sqrt {\\\\mathrm {Hz}}$ </tex-math></inline-formula>. The total active area of the chip is 0.08 mm<sup>2</sup>.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 8\",\"pages\":\"1218-1221\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-04-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10980491/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10980491/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
本文提出了一种宽带、低噪声、低失配的差分跨阻放大器(TIA)。在经典的TIA的单端到差分(S2D)策略中,强路径和弱路径相互补偿,导致低失配输出差分信号。然而,由于强弱信号的输入强度不同,而放大器差分支路的增益相同,因此不能很好地消除不匹配。为了解决这个问题,提出了一种不平衡中和技术(UNT)。采用单面负电容反馈电容增强弱侧信号。此外,该设计采用了高增益输入级和后续级增益峰值的组合,以同时实现改进的带宽和噪声性能。该芯片采用28纳米CMOS工艺制造,在38.8 GHz的3db带宽上实现了66.4 dB $\Omega $的透阻(TI)增益。功耗为49mw(含缓冲器)。平均输入参考电流噪声密度为16.3 pA/ $\sqrt {\mathrm {Hz}}$。芯片的总有效面积为0.08 mm2。
A 38-GHz Differential Transimpedance Amplifier With Unbalanced Neutralizing Technique
In this letter, a broadband, low-noise and low-mismatch differential transimpedance amplifier (TIA) is proposed. In the classical single-ended-to-differential (S2D) strategy of TIA for mismatch reduction, the strong path and the weak path compensate each other, which results in low mismatch output differential signals. However, due to the different input strength of the strong and weak signals but the same gains of amplifier’s differential branches, mismatches could not eliminate well. To address this problem, an unbalanced neutralizing technique (UNT) is proposed. A single-sided negative capacitance feedback capacitor is introduced to strengthen the weak-side signal. Additionally, the design employs a combination of the high-gain input-stage and gain peaking in the subsequent stage to achieve improved bandwidth and noise performance simultaneously. Fabricated by 28-nm CMOS process, the chip achieves a transimpedance (TI) gain of 66.4 dB$\Omega $ across a 3-dB bandwidth of 38.8 GHz. The power consumption is 49 mW (including buffer). The averaged input-referred current noise density is 16.3 pA/$\sqrt {\mathrm {Hz}}$ . The total active area of the chip is 0.08 mm2.