{"title":"双频阻抗变压器采用四段宽、灵活的频率比","authors":"Walid Zahra, Abdelkader Zerfaine, Tarek Djerafi","doi":"10.1002/mop.70309","DOIUrl":null,"url":null,"abstract":"<p>In this paper, a dual-band RF rectifier with flexible frequency ratios is presented. To achieve this flexibility, a four-section transformer is proposed that covers a wide range of the Smith chart impedance, including the region closest to the open-circuit impedance of the diode. Additionally, a new dual-band short stub is introduced, designed to ensure proper current feedback without compromising in-band performance. By combining the dual-band matching circuit with shorted stubs, a wide frequency ratio is achieved. Two different dual-band circuits, with frequencies of 0.7/1.2 and 0.7/2.45 GHz, were fabricated and tested to demonstrate the flexibility of the proposed topology. The designs were based on the SMS-7630 Schottky diode and tested at frequencies below 6 GHz. Experimental results show that the first dual-band circuit (0.7/1.2 GHz) achieves efficiencies of 70% and 60.5%, while the second dual-band circuit (0.7/2.45 GHz) has efficiencies of 88.5% and 50%. The maximum voltages reached were 3.8 and 3.45 V, respectively.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"67 8","pages":""},"PeriodicalIF":1.2000,"publicationDate":"2025-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/mop.70309","citationCount":"0","resultStr":"{\"title\":\"Dual-Band Impedance Transformer Using Four-Section With a Wide and Flexible Frequency Ratio\",\"authors\":\"Walid Zahra, Abdelkader Zerfaine, Tarek Djerafi\",\"doi\":\"10.1002/mop.70309\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this paper, a dual-band RF rectifier with flexible frequency ratios is presented. To achieve this flexibility, a four-section transformer is proposed that covers a wide range of the Smith chart impedance, including the region closest to the open-circuit impedance of the diode. Additionally, a new dual-band short stub is introduced, designed to ensure proper current feedback without compromising in-band performance. By combining the dual-band matching circuit with shorted stubs, a wide frequency ratio is achieved. Two different dual-band circuits, with frequencies of 0.7/1.2 and 0.7/2.45 GHz, were fabricated and tested to demonstrate the flexibility of the proposed topology. The designs were based on the SMS-7630 Schottky diode and tested at frequencies below 6 GHz. Experimental results show that the first dual-band circuit (0.7/1.2 GHz) achieves efficiencies of 70% and 60.5%, while the second dual-band circuit (0.7/2.45 GHz) has efficiencies of 88.5% and 50%. The maximum voltages reached were 3.8 and 3.45 V, respectively.</p>\",\"PeriodicalId\":18562,\"journal\":{\"name\":\"Microwave and Optical Technology Letters\",\"volume\":\"67 8\",\"pages\":\"\"},\"PeriodicalIF\":1.2000,\"publicationDate\":\"2025-08-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/mop.70309\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Optical Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/mop.70309\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Optical Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/mop.70309","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Dual-Band Impedance Transformer Using Four-Section With a Wide and Flexible Frequency Ratio
In this paper, a dual-band RF rectifier with flexible frequency ratios is presented. To achieve this flexibility, a four-section transformer is proposed that covers a wide range of the Smith chart impedance, including the region closest to the open-circuit impedance of the diode. Additionally, a new dual-band short stub is introduced, designed to ensure proper current feedback without compromising in-band performance. By combining the dual-band matching circuit with shorted stubs, a wide frequency ratio is achieved. Two different dual-band circuits, with frequencies of 0.7/1.2 and 0.7/2.45 GHz, were fabricated and tested to demonstrate the flexibility of the proposed topology. The designs were based on the SMS-7630 Schottky diode and tested at frequencies below 6 GHz. Experimental results show that the first dual-band circuit (0.7/1.2 GHz) achieves efficiencies of 70% and 60.5%, while the second dual-band circuit (0.7/2.45 GHz) has efficiencies of 88.5% and 50%. The maximum voltages reached were 3.8 and 3.45 V, respectively.
期刊介绍:
Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas.
- RF, Microwave, and Millimeter Waves
- Antennas and Propagation
- Submillimeter-Wave and Infrared Technology
- Optical Engineering
All papers are subject to peer review before publication