Dual-mode switching of a bidirectional self-rectifying Ti/HfO2/Ti device for bipolar and electronic complementary resistive switching.

This study explores the dual-mode switching behavior of bidirectional self-rectifying Ti/HfO₂/Ti (THT) memristors to address the growing demand for efficient in-memory computing. The device operates in electronic bipolar resistive switching (eBRS) and electronic complementary resistive switching (eCRS) modes with bidirectional self-rectifying properties, differing from conventional unidirectional self-rectifying devices. The device achieves stable dual-mode switching by utilizing electronic trapping/detrapping at oxide layers formed at the top and bottom interfaces, while the HfO₂ layer in the middle serves as a blocking layer. The characteristic bidirectional dual-mode self-rectifying switching offers efficient parity bit generation through in-memory parity generation, minimizing overhead and potential errors during data delivery. When the THT memristors are integrated into a 1 × n line cell configuration, the eBRS mode device as a 1-bit encoded memory cell and the eCRS mode device as a 1-bit parity cell within the given interconnect line enable the desired in-memory parity generation.