{"title":"无衍射光栅AlxIn1-xP/InAs中波长红外成像量子阱红外探测器","authors":"C. Besikci","doi":"10.1109/JSEN.2025.3586472","DOIUrl":null,"url":null,"abstract":"Quantum well infrared photodetector (QWIP) technology still offers the best stability, uniformity, and reproducibility for thermal imaging applications. However, low quantum and conversion efficiencies of the standard QWIP have been bottlenecks for the wider utilization of these sensors. Another limitation of the QWIP technology is the need for a diffraction grating, establishing a barrier for pitch reduction. This article reports strain-compensated diffraction-grating-free Alx<inline-formula> <tex-math>${In}_{{1}-{x}}$ </tex-math></inline-formula>P/InAs QWIP focal plane array (FPA) operating in the mid-wavelength infrared (MWIR) band with characteristics much beyond the limits of standard QWIPs. Despite the absence of a diffraction grating, small-area (<inline-formula> <tex-math>$\\sim 120~\\mu $ </tex-math></inline-formula>m2) pixels with 4.8 and <inline-formula> <tex-math>$5.2~\\mu $ </tex-math></inline-formula>m peak and cut-off wavelengths exhibited peak absorption quantum efficiency (QE) of 33%, peak-specific detectivity of <inline-formula> <tex-math>$\\sim 2\\times 10^{{11}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula><inline-formula> <tex-math>${Hz}^{\\text {1/2}}$ </tex-math></inline-formula>/W, and background-limited performance with f/2 aperture at temperatures exceeding 100 K. The photoconductive gain is adjustable in a wide range under almost constant sensitivity, and the peak conversion efficiency exceeds 50% which is much higher than that of the conventional grating-coupled QWIP. The results of this work are important and promising for overcoming the bottlenecks of the QWIP technology and facilitating wider employment of this important sensor, including demanding imaging applications.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 16","pages":"30614-30621"},"PeriodicalIF":4.3000,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Diffraction-Grating-Free AlxIn1-xP/InAs Quantum Well Infrared Photodetector for Mid-Wavelength Infrared Imaging\",\"authors\":\"C. Besikci\",\"doi\":\"10.1109/JSEN.2025.3586472\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Quantum well infrared photodetector (QWIP) technology still offers the best stability, uniformity, and reproducibility for thermal imaging applications. However, low quantum and conversion efficiencies of the standard QWIP have been bottlenecks for the wider utilization of these sensors. Another limitation of the QWIP technology is the need for a diffraction grating, establishing a barrier for pitch reduction. This article reports strain-compensated diffraction-grating-free Alx<inline-formula> <tex-math>${In}_{{1}-{x}}$ </tex-math></inline-formula>P/InAs QWIP focal plane array (FPA) operating in the mid-wavelength infrared (MWIR) band with characteristics much beyond the limits of standard QWIPs. Despite the absence of a diffraction grating, small-area (<inline-formula> <tex-math>$\\\\sim 120~\\\\mu $ </tex-math></inline-formula>m2) pixels with 4.8 and <inline-formula> <tex-math>$5.2~\\\\mu $ </tex-math></inline-formula>m peak and cut-off wavelengths exhibited peak absorption quantum efficiency (QE) of 33%, peak-specific detectivity of <inline-formula> <tex-math>$\\\\sim 2\\\\times 10^{{11}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>$\\\\cdot $ </tex-math></inline-formula><inline-formula> <tex-math>${Hz}^{\\\\text {1/2}}$ </tex-math></inline-formula>/W, and background-limited performance with f/2 aperture at temperatures exceeding 100 K. The photoconductive gain is adjustable in a wide range under almost constant sensitivity, and the peak conversion efficiency exceeds 50% which is much higher than that of the conventional grating-coupled QWIP. The results of this work are important and promising for overcoming the bottlenecks of the QWIP technology and facilitating wider employment of this important sensor, including demanding imaging applications.\",\"PeriodicalId\":447,\"journal\":{\"name\":\"IEEE Sensors Journal\",\"volume\":\"25 16\",\"pages\":\"30614-30621\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2025-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Sensors Journal\",\"FirstCategoryId\":\"103\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11079857/\",\"RegionNum\":2,\"RegionCategory\":\"综合性期刊\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Journal","FirstCategoryId":"103","ListUrlMain":"https://ieeexplore.ieee.org/document/11079857/","RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
量子阱红外光电探测器(QWIP)技术仍然为热成像应用提供了最好的稳定性、均匀性和可重复性。然而,标准QWIP的低量子和转换效率一直是这些传感器广泛应用的瓶颈。QWIP技术的另一个限制是需要一个衍射光栅,建立一个屏障来降低螺距。本文报道了一种无应变补偿衍射光栅的Alx ${In}_{{1}-{x}}$ P/InAs QWIP焦平面阵列(FPA),其工作在中波长红外(MWIR)波段,其特性远远超出标准QWIP的极限。在没有衍射光栅的情况下,具有4.8和$5.2~\mu $ m峰和截止波长的小面积($\sim 120~\mu $ m2)像元的峰值吸收量子效率(QE)为33%, peak-specific detectivity of $\sim 2\times 10^{{11}}$ cm $\cdot $ ${Hz}^{\text {1/2}}$ /W, and background-limited performance with f/2 aperture at temperatures exceeding 100 K. The photoconductive gain is adjustable in a wide range under almost constant sensitivity, and the peak conversion efficiency exceeds 50% which is much higher than that of the conventional grating-coupled QWIP. The results of this work are important and promising for overcoming the bottlenecks of the QWIP technology and facilitating wider employment of this important sensor, including demanding imaging applications.
Diffraction-Grating-Free AlxIn1-xP/InAs Quantum Well Infrared Photodetector for Mid-Wavelength Infrared Imaging
Quantum well infrared photodetector (QWIP) technology still offers the best stability, uniformity, and reproducibility for thermal imaging applications. However, low quantum and conversion efficiencies of the standard QWIP have been bottlenecks for the wider utilization of these sensors. Another limitation of the QWIP technology is the need for a diffraction grating, establishing a barrier for pitch reduction. This article reports strain-compensated diffraction-grating-free Alx${In}_{{1}-{x}}$ P/InAs QWIP focal plane array (FPA) operating in the mid-wavelength infrared (MWIR) band with characteristics much beyond the limits of standard QWIPs. Despite the absence of a diffraction grating, small-area ($\sim 120~\mu $ m2) pixels with 4.8 and $5.2~\mu $ m peak and cut-off wavelengths exhibited peak absorption quantum efficiency (QE) of 33%, peak-specific detectivity of $\sim 2\times 10^{{11}}$ cm$\cdot $ ${Hz}^{\text {1/2}}$ /W, and background-limited performance with f/2 aperture at temperatures exceeding 100 K. The photoconductive gain is adjustable in a wide range under almost constant sensitivity, and the peak conversion efficiency exceeds 50% which is much higher than that of the conventional grating-coupled QWIP. The results of this work are important and promising for overcoming the bottlenecks of the QWIP technology and facilitating wider employment of this important sensor, including demanding imaging applications.
期刊介绍:
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