垂直Bridgman技术生长CdSxTe1-x混合晶体的热光学性质

IF 4.6 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-08-15 DOI:10.1016/j.mseb.2025.118678

Mohammed Boumhamdi , Jacek Zakrzewski , Miroslaw Maliński , Amine Alaoui Belghiti , Ali Abouais , Karol Strzalkowski , Agnieszka Marasek , Grzegorz Trykowski , Said Laasri

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引用次数: 0

摘要

本研究考察了使用垂直布里奇曼技术生长的CdSxTe1-x混合晶体的光学和热性质，其硫组成范围从x = 0到x = 0.23。通过SEM/EDS分析验证了硫的元素组成。利用光热（PPE）量热法测量热扩散率和热渗透率，从而计算导热系数。利用透射光谱和压电光热光谱（PPS）测定了样品的光学带隙。PPS还用于估计表面损伤层的厚度。热导率从5.45 W·m−1·K−1 （x = 0）下降到1.71 W·m−1·K−1 (x = 0.23)，带隙能量从1.5 eV变化到1.43 eV。讨论了硫的掺入对CdSxTe1-x晶体光学和热性能的影响。

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Thermal and optical properties of CdSxTe1-x mixed crystals grown by the vertical Bridgman technique

This study examines the optical and thermal properties of CdS_xTe_1-x mixed crystals grown using the Vertical Bridgman technique, with sulfur compositions ranging from x = 0 to x = 0.23. The elemental composition of sulfur was verified using SEM/EDS analysis. Photopyroelectric (PPE) calorimetry was utilized to measure thermal diffusivity and effusivity, enabling the calculation of thermal conductivity. Transmittance spectroscopy and Piezoelectric Photothermal Spectroscopy (PPS) were employed to determine the optical band gap for all samples. PPS was also used to estimate the thickness of the surface-damaged layer. Thermal conductivity decreased from 5.45 W·m⁻¹·K⁻¹ (x = 0) to 1.71 W·m⁻¹·K⁻¹ (x = 0.23), while bandgap energy varied from 1.5 eV to 1.43 eV. The influence of the incorporation of sulfur on the optical and thermal properties of CdS_xTe_1-x crystals was discussed.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.