内封面:gaas -量子点微柱单光子源的确定性制造(ad . Quantum technology . 8/2025)

IF 4.3 Q1 OPTICS
Abdulmalik A. Madigawa, Martin Arentoft Jacobsen, Claudia Piccinini, Paweł Wyborski, Ailton Garcia Jr., Saimon F. Covre da Silva, Armando Rastelli, Battulga Munkhbat, Niels Gregersen
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引用次数: 0

摘要

以100%的定位产率证明了液滴蚀刻GaAs量子点在微柱腔中的确定性集成。通过采用低功率带上LED照明引入电荷稳定,p壳激发的收集效率提高了一倍。然后利用确定性积分方法证明了通过实现圆柱环引入的辐射模式的抑制,并且制造的器件发射出高纯度的单光子。更多见2500128号文章,Battulga Munkhbat, Niels Gregersen和同事。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Inside Front Cover: Deterministic Fabrication of GaAs-Quantum-Dot Micropillar Single-Photon Sources (Adv. Quantum Technol. 8/2025)

Inside Front Cover: Deterministic Fabrication of GaAs-Quantum-Dot Micropillar Single-Photon Sources (Adv. Quantum Technol. 8/2025)

Inside Front Cover: Deterministic Fabrication of GaAs-Quantum-Dot Micropillar Single-Photon Sources (Adv. Quantum Technol. 8/2025)

Inside Front Cover: Deterministic Fabrication of GaAs-Quantum-Dot Micropillar Single-Photon Sources (Adv. Quantum Technol. 8/2025)

Inside Front Cover: Deterministic Fabrication of GaAs-Quantum-Dot Micropillar Single-Photon Sources (Adv. Quantum Technol. 8/2025)

Deterministic integration of droplet-etched GaAs quantum dots into micropillar cavities is demonstrated with 100% positioning yield. The collection efficiency for p-shell excitation is doubled by introducing charge stabilization using low-power above-band LED illumination. The deterministic integration method is then used to demonstrate suppression of radiation modes introduced by implementing cylindrical rings, and the fabricated devices emit high-purity single photons. More in article number 2500128, Battulga Munkhbat, Niels Gregersen, and co-workers.

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