高选择性c波段矩形siw型带通吸收滤波器

IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Amir Hossein Mehramiz, Morteza Rezaee, Ali Mehrdadian, Keyhan Hosseini
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引用次数: 0

摘要

基于矩形基板集成波导(SIW)技术,设计了一种高选择性二阶带通吸收滤波器。所提出的c波段滤波器受到互补双工器架构的启发,设计在5.8 GHz的中心频率上。吸收滤波器由t型结、反射带通和带阻滤波器组成。利用t型结将输入路径划分为两个主通道和辅助通道,以模拟互补双工器架构。带通滤波器将滤波器通频带频谱内的信号引导到输出端。此外,带阻滤波器具有精心设计的匹配部分,可引导反射在带通滤波器阻带中的波在匹配负载中消散。滤波器基片为RO4003c,介电常数为3.55,厚度为0.813 mm。仿真和测量结果表明,10db分数吸收带宽为14%,通带插入损耗为1.39 dB, 5.8 GHz时回波损耗大于30 dB。此外,3db通带带宽为3.6%,这表明与类似的报告结果相比,所提出的吸收滤波器在选择性方面具有优势,同时保持可接受的插入损耗。滤波器设计简单而系统,因此可以直接增加其顺序和选择性,而无需增加电阻的数量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Highly-Selective C-Band Rectangular SIW-Based Bandpass Absorptive Filter

A high-selectivity second-order bandpass absorptive filter is designed based on the rectangular substrate-integrated waveguide (SIW) technology. The proposed C-band filter is inspired by the complementary duplexer architecture and is designed at the central frequency of 5.8 GHz. The absorptive filter consists of a T-junction, and reflective bandpass and bandstop filters. The T-junction is exploited to divide the input path into two main and auxiliary channels to mimic the complementary duplexer architecture. The bandpass filter guides the signal within the passband spectrum of the filter to the output. Furthermore, the bandstop filter, with a carefully designed matching section, guides the wave reflected in the stopband of the bandpass filter to be dissipated in a matched load. The filter substrate is RO4003c with a dielectric constant of 3.55 and a thickness of 0.813 mm. The simulation and measurement results show that the 10-dB fractional absorption bandwidth is 14%, the passband insertion loss is 1.39 dB, and the return loss at 5.8 GHz is more than 30 dB. In addition, the 3-dB passband bandwidth is 3.6%, which denotes the superiority of the proposed absorptive filter in terms of selectivity compared to the similar reported results, while maintaining an acceptable insertion loss. The filter design is simple and systematic, and thus it is straightforward to increase its order and selectivity without increasing the number of resistors.

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来源期刊
Microwave and Optical Technology Letters
Microwave and Optical Technology Letters 工程技术-工程:电子与电气
CiteScore
3.40
自引率
20.00%
发文量
371
审稿时长
4.3 months
期刊介绍: Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication
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