gaas -量子点微柱单光子源的确定性制备

IF 4.3 Q1 OPTICS
Abdulmalik A. Madigawa, Martin Arentoft Jacobsen, Claudia Piccinini, Paweł Wyborski, Ailton Garcia Jr., Saimon F. Covre da Silva, Armando Rastelli, Battulga Munkhbat, Niels Gregersen
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引用次数: 0

摘要

本文研究了采用确定性制造技术将液滴蚀刻GaAs量子点(QDs)集成到微柱结构中的性能。演示了74个器件的统一量子点定位良率和一致的器件性能。在p壳层激励下,微柱内的QD衰减动力学表现为双指数行为,并伴有强度波动,将源效率限制在<;4.5%。通过低功率带上LED激发的电荷稳定有效地减少了这些波动,使源效率翻了一番,达到9%。此外,通过实施理论上预测的圆柱形环来抑制辐射模式,将收集效率提高了4倍。在实验中,仅获得了适度的改进,强调了即使是微小的制造缺陷对这种先进设计的影响。这些发现证明了确定性制造方法在生产高产量、均匀器件方面的可靠性,同时为电荷噪声和复杂弛豫动力学对性能的影响提供了详细的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Deterministic Fabrication of GaAs-Quantum-Dot Micropillar Single-Photon Sources

Deterministic Fabrication of GaAs-Quantum-Dot Micropillar Single-Photon Sources

Deterministic Fabrication of GaAs-Quantum-Dot Micropillar Single-Photon Sources

Deterministic Fabrication of GaAs-Quantum-Dot Micropillar Single-Photon Sources

Deterministic Fabrication of GaAs-Quantum-Dot Micropillar Single-Photon Sources

This study investigates the performance of droplet-etched GaAs quantum dots (QDs) integrated into micropillar structures using a deterministic fabrication technique. A unity QD positioning yield across 74 devices and consistent device performanceare demonstrated. Under p-shell excitation, the QD decay dynamics within the micropillars exhibit biexponential behavior, accompanied by intensity fluctuations limiting the source efficiency to < 4.5%. Charge stabilization via low-power above-band LED excitation effectively reduces these fluctuations, doubling the source efficiency to $\sim$ 9%. Moreover, suppression of radiation modes is introduced by implementing cylindrical rings theoretically predicted to boost the collection efficiency by a factor of 4. Experimentally, only a modest improvement is obtained, underscoring the influence of even minor fabrication imperfections for this advanced design. These findings demonstrate the reliability of the deterministic fabrication approach in producing high-yield, uniform devices, while offering detailed insights into the influence of charge noise and complex relaxation dynamics on the performance.

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CiteScore
7.90
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