具有坡数转换电流的短路保护电路,短路检测和自适应软关断

IF 3.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Seungjik Lee;Jinman Myung;Geonwoo Park;Yoseph Kim;Ockgoo Lee;Ilku Nam
{"title":"具有坡数转换电流的短路保护电路,短路检测和自适应软关断","authors":"Seungjik Lee;Jinman Myung;Geonwoo Park;Yoseph Kim;Ockgoo Lee;Ilku Nam","doi":"10.1109/OJPEL.2025.3594872","DOIUrl":null,"url":null,"abstract":"A short-circuit protection circuit is proposed for power electronic systems employing silicon carbide metal–oxide–semiconductor field-effect transistors. The circuit incorporates two innovative techniques: a current slope-to-digital conversion for short-circuit detection and an adaptive soft turn-off based on transistor input capacitance sensing. A low-side gate driver incorporating the proposed circuit was implemented on an integrated chip for functional verification. The gate driver reliably protects a wide range of silicon carbide metal–oxide–semiconductor field-effect transistor devices with current capacities from 10 to 95 A during short-circuit conditions. It ensures that the drain–source voltage overshoot remains below 14.5% of the drain–source voltage while achieving a consistent response delay of approximately 750 ns for short-circuit detection and a turn-off time of approximately 500 ns for soft turn-off operation.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"1382-1389"},"PeriodicalIF":3.9000,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11106732","citationCount":"0","resultStr":"{\"title\":\"Short-Circuit Protection Circuit With Current Slope-to-Digital Conversion Short-Circuit Detection and Adaptive Soft Turn-Off\",\"authors\":\"Seungjik Lee;Jinman Myung;Geonwoo Park;Yoseph Kim;Ockgoo Lee;Ilku Nam\",\"doi\":\"10.1109/OJPEL.2025.3594872\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A short-circuit protection circuit is proposed for power electronic systems employing silicon carbide metal–oxide–semiconductor field-effect transistors. The circuit incorporates two innovative techniques: a current slope-to-digital conversion for short-circuit detection and an adaptive soft turn-off based on transistor input capacitance sensing. A low-side gate driver incorporating the proposed circuit was implemented on an integrated chip for functional verification. The gate driver reliably protects a wide range of silicon carbide metal–oxide–semiconductor field-effect transistor devices with current capacities from 10 to 95 A during short-circuit conditions. It ensures that the drain–source voltage overshoot remains below 14.5% of the drain–source voltage while achieving a consistent response delay of approximately 750 ns for short-circuit detection and a turn-off time of approximately 500 ns for soft turn-off operation.\",\"PeriodicalId\":93182,\"journal\":{\"name\":\"IEEE open journal of power electronics\",\"volume\":\"6 \",\"pages\":\"1382-1389\"},\"PeriodicalIF\":3.9000,\"publicationDate\":\"2025-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11106732\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE open journal of power electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11106732/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE open journal of power electronics","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11106732/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种采用碳化硅金属氧化物半导体场效应晶体管的电力电子系统短路保护电路。该电路结合了两种创新技术:用于短路检测的电流斜率到数字转换和基于晶体管输入电容传感的自适应软关断。在集成芯片上实现了包含所提电路的低侧栅极驱动器,以进行功能验证。在短路条件下,栅极驱动器可靠地保护大范围的电流容量从10到95a的碳化硅金属氧化物半导体场效应晶体管器件。它确保漏源电压过调量保持在漏源电压的14.5%以下,同时实现短路检测的一致响应延迟约750 ns,软关断操作的关断时间约500 ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Short-Circuit Protection Circuit With Current Slope-to-Digital Conversion Short-Circuit Detection and Adaptive Soft Turn-Off
A short-circuit protection circuit is proposed for power electronic systems employing silicon carbide metal–oxide–semiconductor field-effect transistors. The circuit incorporates two innovative techniques: a current slope-to-digital conversion for short-circuit detection and an adaptive soft turn-off based on transistor input capacitance sensing. A low-side gate driver incorporating the proposed circuit was implemented on an integrated chip for functional verification. The gate driver reliably protects a wide range of silicon carbide metal–oxide–semiconductor field-effect transistor devices with current capacities from 10 to 95 A during short-circuit conditions. It ensures that the drain–source voltage overshoot remains below 14.5% of the drain–source voltage while achieving a consistent response delay of approximately 750 ns for short-circuit detection and a turn-off time of approximately 500 ns for soft turn-off operation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
8.60
自引率
0.00%
发文量
0
审稿时长
8 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信