一种0.037 mm²,65.8 nw的模拟脉宽调制背散射温度电容传感器

IF 3.4 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Taotao Wu;Yuxiao Zhao;Xiaochuan Peng;Jing Feng;Hao Min
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引用次数: 0

摘要

物联网(IoT)中的无电池RFID传感器标签期望低成本和高能效的多参数传感解决方案。传统的传感器设计依赖于时间复用参数选择来防止输出耦合,这引入了额外的控制逻辑,增加了成本和设计复杂性。本文提出了一种具有模拟脉宽调制(PWM)后向散射的温度和电容(T/C)传感器。该传感器通过提出的自开关双采样(SDS)接口实现自解耦温度传感,消除了参数选择的需求。通过双采样,温度敏感电流交替地对参考电容器和传感电容器充电,同时将T/C信息转换为PWM波形。低脉宽(LPW)和脉宽比(PWR)分别代表温度和电容,实现同步和去耦读出。同时,SDS复用PWM波形作为双采样控制信号,无需外部控制逻辑。PWM信号通过模拟PWM反向散射发送回,无需数字化。SDS传感器采用紧凑的超低功耗双斜率弛豫振荡器(RxO),具有固有的自开关拓扑结构,用于T/ c到pwm转换。该传感器采用55纳米CMOS技术制造,占地0.037 mm2,功耗为65.8 nW,电压为0.8 V。测量结果表明,温湿度传感器在$- 20\sim 100^{\circ }$℃下的温度误差为- 1.22/+1.17℃($3{\sigma }$),在$0\sim 35$ pF下的电容误差为- 197/192 fF ($3{\sigma }$)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.037-mm², 65.8-nW Temperature and Capacitance Sensor With Analog Pulse-Width-Modulation Backscatter
Battery-less RFID sensor tags in the Internet of Things (IoT) expect low-cost and power-efficiency multiparameter sensing solutions. Traditional sensor designs rely on time-multiplexed parameter selection to prevent output coupling, which introduces extra control logic and increases cost and design complexity. This paper presents a temperature and capacitance (T/C) sensor with analog pulse-width-modulated (PWM) backscatter. The sensor achieves self-decoupling T/C sensing through the proposed self-switching double sampling (SDS) interface, eliminating the demand for parameter selection. With double sampling, a temperature-sensitive current alternately charges a reference capacitor and a sensing capacitor, simultaneously translating T/C information into a PWM waveform. The low pulse width (LPW) and pulse width ratio (PWR) independently represent temperature and capacitance, enabling simultaneous and decoupled readout. Meanwhile, SDS reuses the PWM waveform as the double-sampling control signal without external control logic. The PWM signal is sent back by analog PWM backscatter without the need for digitization. The SDS sensor employs a compact, ultra-low-power dual-slope relaxation oscillator (RxO) with inherent self-switching topology for T/C-to-PWM conversion. Fabricated in 55-nm CMOS technology, the sensor occupies 0.037 mm2 and consumes 65.8 nW at 0.8 V. Measurement results show that the T/C sensor achieves a temperature inaccuracy of −1.22/+1.17°C ( $3{\sigma }$ ) in $- 20\sim 100^{\circ }$ C and a capacitance inaccuracy of −197/192 fF ( $3{\sigma }$ ) in $0\sim 35$ pF.
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CiteScore
5.70
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