氢离子和氦离子与硅的碰撞:一个随时间变化的密度泛函理论研究

IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION
Bin Zhang , Tao Ying , Weiqi Li , XiaoDong Xu , Jianqun Yang , Xingji Li
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引用次数: 0

摘要

本研究采用时间依赖密度泛函理论(TDDFT)模拟了氢(H)和氦(He)离子(0.5-10 keV)沿<与硅的碰撞过程;100比;取向。通过比较材料中不同电荷态粒子(如质子、H、He、He2+)的阻挡力差异,发现抛射电荷态和原子序数是控制入射离子能量耗散的关键因素。结合实时电荷态跟踪和力演化的进一步分析阐明了离子在材料中能量耗散的微观机制。与SRIM仿真结果的比较证实了原子/电子结构在精确计算停止功率中的关键作用。基于态密度(DOS)和差分电荷密度,我们阐明了碰撞系统中电子态的特征演化和电荷转移动力学。该研究为深入理解离子碰撞动力学和精确构建辐射损伤模型提供了重要的理论支持。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Collision of H and He ions with silicon: A time dependent density functional theory study
This study employs time-dependent density functional theory (TDDFT) to simulate the collision processes of hydrogen (H) and helium (He) ions (0.5–10 keV) with silicon along the < 100 > orientation. By comparing the differences in stopping power among particles with different charge states (e.g., proton, H, He, He2+) in the material, it is found that the projectile charge state and atomic number are key factors governing the energy dissipation of incident ions. Further analysis combining real-time charge-state tracking and force evolution elucidates the microscopic mechanisms of ions energy dissipation in the material. A comparison with SRIM simulation results confirms the critical role of atomic/electronic structure in the accurate calculation of stopping power. Based on the density of states (DOS) and differential charge density, we elucidate the characteristic evolution of electronic states and the charge transfer dynamics in collision systems. This research provides important theoretical support for a deeper understanding of ion collision dynamics and the precise construction of radiation damage models.
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来源期刊
CiteScore
2.80
自引率
7.70%
发文量
231
审稿时长
1.9 months
期刊介绍: Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.
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