The analysis of the electroluminescence performance of multi-RISC channel single-emissive-layer organic light-emitting diode

With the advancement of technology, an increasing number of high efficiency organic light-emitting diode (OLED) devices utilizing multi-reverse intersystem crossing (RISC) channels have been reported. The multi-RISC channel strategy has emerged as a highly feasible OLED design approach. However, the analysis of multi-RISC channel single-emissive-layer OLEDs still faces numerous challenges due to the presence of multiple different kinds of molecules in the EML. Herein, based on experiments, molecular dynamics (MD) simulations, and quantum chemical calculations, a systematic analysis has been conducted on the impact of doping concentration on the electroluminescence performance of multi-RISC channel single-emissive-layer OLEDs. It is believed that the impact of doping concentration on the electroluminescence performance of multi-RISC channel single-emissive-layer OLEDs is attributed to the charge carrier recombination order in the emitting layer, the fluctuation of the excited state energy level of exciplex caused by the change in molecular polarity surrounding the emissive exciplex, and the transition between different efficiency roll-off models. This work provides new pathways and analysis methods to enhancing the efficiency of multi-RISC channel single-emissive-layer OLEDs.