基于CsPbBr2I/Si异质结的超宽带自功率全斯托克斯偏振光探测与成像。

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Yifan Li*, Jiamin Hu, Yiming Jia, Cunguang Lou, Xiuling Liu and Jianquan Yao, 
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引用次数: 0

摘要

硅由于其在响应速度和光电转换效率方面的明显优势,已成为光电探测领域的主导材料。然而,由于缺乏固有的极化选择性,硅在实现宽带紫外(UV)到红外(IR)范围内的极化检测方面仍然面临着重大挑战。本文在CsPbBr2I和n型金字塔-硅复合结构的基础上,成功研制了Ag/CsPbBr2I/Si/Ag垂直结构的超宽带紫外-红外偏振光电探测器,旨在实现全Stokes偏振检测。该器件在紫外至红外波段(405 ~ 1319 nm)表现出优异的宽带极化响应,特别是在1064 nm波段,各向异性比高达72.7。通过优化CsPbBr2I和纳米金字塔硅结构的各向异性光学响应,该器件在1064 nm照明下实现了零偏置电压下4 μs的快速响应时间。实验结果表明,该探测器在宽带范围内具有稳定、快速的光开关响应和优异的偏振灵敏度。在零偏置电压下,1064 nm照明下的最大响应达到270 mA/W,归一化检测率为2.6 × 1013 Jones,噪声等效功率为44 pW/Hz1/2。通过深入讨论,1319 nm处的光电响应机制归因于PTE效应和异质结效应。此外,全Stokes参数验证了该器件在偏振态表征方面的有效性,单点像元成像实验进一步证实了其在宽带偏振成像方面的应用潜力。本研究为推进下一代片上偏振成像系统提供了一条新途径,在安全检测、高分辨率医学成像、医工交叉等领域具有重要的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Ultrabroadband UV-IR Self-Power Full-Stokes Polarization Photodetection and Imaging Based on the CsPbBr2I/Si Heterojunction

Ultrabroadband UV-IR Self-Power Full-Stokes Polarization Photodetection and Imaging Based on the CsPbBr2I/Si Heterojunction

Silicon has become a leading material in photoelectric detection, owing to its distinct advantages in both response speed and photoelectric conversion efficiency. However, due to the lack of intrinsic polarization selectivity, silicon still faces major challenges in achieving polarization detection in the broadband ultraviolet (UV) to infrared (IR) range. In this paper, we have successfully developed an ultrabroadband UV-IR polarization photodetector with a Ag/CsPbBr2I/Si/Ag vertical structure based on the CsPbBr2I and N-type pyramid-silicon composite structure, which is designed to achieve full Stokes polarization detection. The device exhibits excellent broadband polarization response in the ultraviolet to infrared band (405–1319 nm), especially at 1064 nm, showing an anisotropy ratio of up to 72.7. By optimizing the anisotropic optical response of CsPbBr2I and nanoscale pyramid silicon structures, the device achieves a fast response time of 4 μs under 1064 nm illumination at a zero bias voltage. The experimental results show that the detector has a stable and fast optical switching response and excellent polarization sensitivity in the broadband range. The maximum response reaches 270 mA/W under 1064 nm illumination at zero bias voltage, the normalized detection rate is 2.6 × 1013 Jones, and the noise equivalent power is 44 pW/Hz1/2. Through in-depth discussions, the photoelectric response mechanism at 1319 nm is attributed to the PTE effect and the heterojunction effect. In addition, the full Stokes parameter verifies the effectiveness of the device in polarization state characterization, and the single-point pixel imaging experiment further confirms its application potential in broadband polarization imaging. This study proposes a novel approach for advancing the next generation of the on-chip polarization imaging system and shows an important application prospect in the fields of safety detection, high-resolution medical imaging, and medico-industrial intersection.

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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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