Yifan Li*, Jiamin Hu, Yiming Jia, Cunguang Lou, Xiuling Liu and Jianquan Yao,
{"title":"基于CsPbBr2I/Si异质结的超宽带自功率全斯托克斯偏振光探测与成像。","authors":"Yifan Li*, Jiamin Hu, Yiming Jia, Cunguang Lou, Xiuling Liu and Jianquan Yao, ","doi":"10.1021/acsami.5c09541","DOIUrl":null,"url":null,"abstract":"<p >Silicon has become a leading material in photoelectric detection, owing to its distinct advantages in both response speed and photoelectric conversion efficiency. However, due to the lack of intrinsic polarization selectivity, silicon still faces major challenges in achieving polarization detection in the broadband ultraviolet (UV) to infrared (IR) range. In this paper, we have successfully developed an ultrabroadband UV-IR polarization photodetector with a Ag/CsPbBr<sub>2</sub>I/Si/Ag vertical structure based on the CsPbBr<sub>2</sub>I and N-type pyramid-silicon composite structure, which is designed to achieve full Stokes polarization detection. The device exhibits excellent broadband polarization response in the ultraviolet to infrared band (405–1319 nm), especially at 1064 nm, showing an anisotropy ratio of up to 72.7. By optimizing the anisotropic optical response of CsPbBr<sub>2</sub>I and nanoscale pyramid silicon structures, the device achieves a fast response time of 4 μs under 1064 nm illumination at a zero bias voltage. The experimental results show that the detector has a stable and fast optical switching response and excellent polarization sensitivity in the broadband range. The maximum response reaches 270 mA/W under 1064 nm illumination at zero bias voltage, the normalized detection rate is 2.6 × 10<sup>13</sup> Jones, and the noise equivalent power is 44 pW/Hz<sup>1/2</sup>. Through in-depth discussions, the photoelectric response mechanism at 1319 nm is attributed to the PTE effect and the heterojunction effect. In addition, the full Stokes parameter verifies the effectiveness of the device in polarization state characterization, and the single-point pixel imaging experiment further confirms its application potential in broadband polarization imaging. This study proposes a novel approach for advancing the next generation of the on-chip polarization imaging system and shows an important application prospect in the fields of safety detection, high-resolution medical imaging, and medico-industrial intersection.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"17 33","pages":"47197–47206"},"PeriodicalIF":8.2000,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultrabroadband UV-IR Self-Power Full-Stokes Polarization Photodetection and Imaging Based on the CsPbBr2I/Si Heterojunction\",\"authors\":\"Yifan Li*, Jiamin Hu, Yiming Jia, Cunguang Lou, Xiuling Liu and Jianquan Yao, \",\"doi\":\"10.1021/acsami.5c09541\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Silicon has become a leading material in photoelectric detection, owing to its distinct advantages in both response speed and photoelectric conversion efficiency. However, due to the lack of intrinsic polarization selectivity, silicon still faces major challenges in achieving polarization detection in the broadband ultraviolet (UV) to infrared (IR) range. In this paper, we have successfully developed an ultrabroadband UV-IR polarization photodetector with a Ag/CsPbBr<sub>2</sub>I/Si/Ag vertical structure based on the CsPbBr<sub>2</sub>I and N-type pyramid-silicon composite structure, which is designed to achieve full Stokes polarization detection. The device exhibits excellent broadband polarization response in the ultraviolet to infrared band (405–1319 nm), especially at 1064 nm, showing an anisotropy ratio of up to 72.7. By optimizing the anisotropic optical response of CsPbBr<sub>2</sub>I and nanoscale pyramid silicon structures, the device achieves a fast response time of 4 μs under 1064 nm illumination at a zero bias voltage. The experimental results show that the detector has a stable and fast optical switching response and excellent polarization sensitivity in the broadband range. The maximum response reaches 270 mA/W under 1064 nm illumination at zero bias voltage, the normalized detection rate is 2.6 × 10<sup>13</sup> Jones, and the noise equivalent power is 44 pW/Hz<sup>1/2</sup>. Through in-depth discussions, the photoelectric response mechanism at 1319 nm is attributed to the PTE effect and the heterojunction effect. In addition, the full Stokes parameter verifies the effectiveness of the device in polarization state characterization, and the single-point pixel imaging experiment further confirms its application potential in broadband polarization imaging. This study proposes a novel approach for advancing the next generation of the on-chip polarization imaging system and shows an important application prospect in the fields of safety detection, high-resolution medical imaging, and medico-industrial intersection.</p>\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"17 33\",\"pages\":\"47197–47206\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsami.5c09541\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsami.5c09541","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Ultrabroadband UV-IR Self-Power Full-Stokes Polarization Photodetection and Imaging Based on the CsPbBr2I/Si Heterojunction
Silicon has become a leading material in photoelectric detection, owing to its distinct advantages in both response speed and photoelectric conversion efficiency. However, due to the lack of intrinsic polarization selectivity, silicon still faces major challenges in achieving polarization detection in the broadband ultraviolet (UV) to infrared (IR) range. In this paper, we have successfully developed an ultrabroadband UV-IR polarization photodetector with a Ag/CsPbBr2I/Si/Ag vertical structure based on the CsPbBr2I and N-type pyramid-silicon composite structure, which is designed to achieve full Stokes polarization detection. The device exhibits excellent broadband polarization response in the ultraviolet to infrared band (405–1319 nm), especially at 1064 nm, showing an anisotropy ratio of up to 72.7. By optimizing the anisotropic optical response of CsPbBr2I and nanoscale pyramid silicon structures, the device achieves a fast response time of 4 μs under 1064 nm illumination at a zero bias voltage. The experimental results show that the detector has a stable and fast optical switching response and excellent polarization sensitivity in the broadband range. The maximum response reaches 270 mA/W under 1064 nm illumination at zero bias voltage, the normalized detection rate is 2.6 × 1013 Jones, and the noise equivalent power is 44 pW/Hz1/2. Through in-depth discussions, the photoelectric response mechanism at 1319 nm is attributed to the PTE effect and the heterojunction effect. In addition, the full Stokes parameter verifies the effectiveness of the device in polarization state characterization, and the single-point pixel imaging experiment further confirms its application potential in broadband polarization imaging. This study proposes a novel approach for advancing the next generation of the on-chip polarization imaging system and shows an important application prospect in the fields of safety detection, high-resolution medical imaging, and medico-industrial intersection.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.