PECVD沉积用于光伏组件保护的疏水性SiOxCy:H薄膜

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ahmed Kotbi, Pierre Barroy, Michael Lejeune, Ilham Hamdi Alaoui, Abdoul-Azizou Aziraf AFO, Andreas Zeinert, Mustapha Jouiad
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引用次数: 0

摘要

本研究探索了在不同射频功率条件下制备的SiOxCy:H薄膜的优化,以实现增强的水还原,同时保持光伏(PV)性能。采用等离子体增强化学气相沉积(PECVD)技术在玻璃衬底上沉积了六甲基二硅氧烷薄膜。采用固滴法测定水接触角。我们的研究结果表明,在200 W和300 W下沉积的SiOxCy:H薄膜表现出亲水性(θ < 90°),而在100 W下制备的薄膜则表现出疏水性(θ > 90°),优化了表面润湿性,从而实现了防水应用。值得注意的是,将100w薄膜应用于太阳能电池时,效率损失最小(0.47%),填充系数仅下降1%,证实PV性能几乎没有改变。这些发现突出了SiOxCy:H薄膜在优化条件下制造的潜力,在不影响太阳能电池功能的情况下提供有效的防潮保护。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Hydrophobic SiOxCy:H thin films deposited by PECVD for photovoltaic module protection

Hydrophobic SiOxCy:H thin films deposited by PECVD for photovoltaic module protection

Hydrophobic SiOxCy:H thin films deposited by PECVD for photovoltaic module protection

This study explores the optimization of SiOxCy:H thin films fabricated under varying radio frequency power conditions to achieve enhanced water repeal while preserving photovoltaic (PV) performance. Thin films derived from hexamethyldisiloxane were deposited on glass substrates via plasma-enhanced chemical vapor deposition (PECVD). The sessile drop technique was used to assess the water contact angle. Our findings indicate that SiOxCy:H films deposited at 200 W and 300 W exhibit hydrophilic behavior (θ < 90°), whereas the film produced at 100 W achieves hydrophobicity (θ > 90°), optimizing surface wettability for water-repellent applications. Notably, applying the 100 W film to a solar cell resulted in minimal efficiency loss (0.47%) and only a 1% decrease in fill factor, confirming that PV performance remained practically unaltered. These findings highlight the potential of SiOxCy:H thin films fabricated at optimized conditions to provide effective protection against moisture without compromising solar cell functionality.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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