Zenghui Liu*, Zhenjun Shao, Yunjian Cao, Hao Li, Lin Yang, Hangyu Zhou, Jun Xu, Jingrui Li*, Gang Niu*, Wei Ren and Zuo-Guang Ye,
{"title":"应变工程提高AlScN合金的压电/铁电性:来自第一性原理计算的见解","authors":"Zenghui Liu*, Zhenjun Shao, Yunjian Cao, Hao Li, Lin Yang, Hangyu Zhou, Jun Xu, Jingrui Li*, Gang Niu*, Wei Ren and Zuo-Guang Ye, ","doi":"10.1021/acs.chemmater.5c01383","DOIUrl":null,"url":null,"abstract":"<p >AlScN is a highly promising novel ferroelectric material featuring excellent high-temperature stability and CMOS compatibility, making it a potential candidate for 5G RF front-end filters, next-generation power devices, memories, and emerging in-memory computing devices. However, the rather mediocre piezoelectric coefficient and relatively large coercive field remain critical bottlenecks for its widespread adoption in applications. To provide theoretical guidance and effective strategies for optimizing the AlScN performance, we propose a synergistic regulation strategy based on alloying and strain engineering and conduct first-principles calculations using density functional theory to investigate the effects of Sc concentration and epitaxial tensile strain on the properties of AlScN. The proposed strategy is found to effectively enhance the piezoelectric strain coefficient (<i>d</i><sub>33</sub> > 300 pC·N<sup>–1</sup>) and electromechanical coupling coefficient (<i>k</i><sub>33</sub><sup>2</sup> ∼ 55%) of AlScN, and reduce its coercive field (<i>E</i><sub>C</sub>), while maintaining a large polarization (<i>P</i><sub>sp</sub> > 68 μC·cm<sup>–2</sup>). The substantial increase in <i>d</i><sub>33</sub> and <i>k</i><sub>33</sub><sup>2</sup> is highly beneficial for optimizing the performance of bulk acoustic wave resonators for signal processing in RF applications. Meanwhile, the reduction in <i>E</i><sub>C</sub> provides new opportunities for low-power ferroelectric memory devices, such as ferroelectric random-access memory and in-memory computing synaptic devices. The weakened bond strength and enhanced Born effective charge are found to be crucial in these performance optimizations. Furthermore, we examine the high-temperature stability of strain-engineered AlN-based piezo-/ferroelectric materials through ab initio molecular dynamics simulations. This work not only provides an effective strategy and valuable insights for physical property optimization in AlScN from the theoretical point of view but also clarifies the mechanisms of enhanced piezo-/ferroelectricity in wurtzite alloy systems by application of epitaxial strain and chemical modification.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":"37 15","pages":"6026–6036"},"PeriodicalIF":7.0000,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Strain Engineering Boosts Piezo-/Ferroelectricity in AlScN Alloy: Insights from First-Principles Calculations\",\"authors\":\"Zenghui Liu*, Zhenjun Shao, Yunjian Cao, Hao Li, Lin Yang, Hangyu Zhou, Jun Xu, Jingrui Li*, Gang Niu*, Wei Ren and Zuo-Guang Ye, \",\"doi\":\"10.1021/acs.chemmater.5c01383\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >AlScN is a highly promising novel ferroelectric material featuring excellent high-temperature stability and CMOS compatibility, making it a potential candidate for 5G RF front-end filters, next-generation power devices, memories, and emerging in-memory computing devices. However, the rather mediocre piezoelectric coefficient and relatively large coercive field remain critical bottlenecks for its widespread adoption in applications. To provide theoretical guidance and effective strategies for optimizing the AlScN performance, we propose a synergistic regulation strategy based on alloying and strain engineering and conduct first-principles calculations using density functional theory to investigate the effects of Sc concentration and epitaxial tensile strain on the properties of AlScN. The proposed strategy is found to effectively enhance the piezoelectric strain coefficient (<i>d</i><sub>33</sub> > 300 pC·N<sup>–1</sup>) and electromechanical coupling coefficient (<i>k</i><sub>33</sub><sup>2</sup> ∼ 55%) of AlScN, and reduce its coercive field (<i>E</i><sub>C</sub>), while maintaining a large polarization (<i>P</i><sub>sp</sub> > 68 μC·cm<sup>–2</sup>). The substantial increase in <i>d</i><sub>33</sub> and <i>k</i><sub>33</sub><sup>2</sup> is highly beneficial for optimizing the performance of bulk acoustic wave resonators for signal processing in RF applications. Meanwhile, the reduction in <i>E</i><sub>C</sub> provides new opportunities for low-power ferroelectric memory devices, such as ferroelectric random-access memory and in-memory computing synaptic devices. The weakened bond strength and enhanced Born effective charge are found to be crucial in these performance optimizations. Furthermore, we examine the high-temperature stability of strain-engineered AlN-based piezo-/ferroelectric materials through ab initio molecular dynamics simulations. This work not only provides an effective strategy and valuable insights for physical property optimization in AlScN from the theoretical point of view but also clarifies the mechanisms of enhanced piezo-/ferroelectricity in wurtzite alloy systems by application of epitaxial strain and chemical modification.</p>\",\"PeriodicalId\":33,\"journal\":{\"name\":\"Chemistry of Materials\",\"volume\":\"37 15\",\"pages\":\"6026–6036\"},\"PeriodicalIF\":7.0000,\"publicationDate\":\"2025-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chemistry of Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.chemmater.5c01383\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemistry of Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.chemmater.5c01383","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Strain Engineering Boosts Piezo-/Ferroelectricity in AlScN Alloy: Insights from First-Principles Calculations
AlScN is a highly promising novel ferroelectric material featuring excellent high-temperature stability and CMOS compatibility, making it a potential candidate for 5G RF front-end filters, next-generation power devices, memories, and emerging in-memory computing devices. However, the rather mediocre piezoelectric coefficient and relatively large coercive field remain critical bottlenecks for its widespread adoption in applications. To provide theoretical guidance and effective strategies for optimizing the AlScN performance, we propose a synergistic regulation strategy based on alloying and strain engineering and conduct first-principles calculations using density functional theory to investigate the effects of Sc concentration and epitaxial tensile strain on the properties of AlScN. The proposed strategy is found to effectively enhance the piezoelectric strain coefficient (d33 > 300 pC·N–1) and electromechanical coupling coefficient (k332 ∼ 55%) of AlScN, and reduce its coercive field (EC), while maintaining a large polarization (Psp > 68 μC·cm–2). The substantial increase in d33 and k332 is highly beneficial for optimizing the performance of bulk acoustic wave resonators for signal processing in RF applications. Meanwhile, the reduction in EC provides new opportunities for low-power ferroelectric memory devices, such as ferroelectric random-access memory and in-memory computing synaptic devices. The weakened bond strength and enhanced Born effective charge are found to be crucial in these performance optimizations. Furthermore, we examine the high-temperature stability of strain-engineered AlN-based piezo-/ferroelectric materials through ab initio molecular dynamics simulations. This work not only provides an effective strategy and valuable insights for physical property optimization in AlScN from the theoretical point of view but also clarifies the mechanisms of enhanced piezo-/ferroelectricity in wurtzite alloy systems by application of epitaxial strain and chemical modification.
期刊介绍:
The journal Chemistry of Materials focuses on publishing original research at the intersection of materials science and chemistry. The studies published in the journal involve chemistry as a prominent component and explore topics such as the design, synthesis, characterization, processing, understanding, and application of functional or potentially functional materials. The journal covers various areas of interest, including inorganic and organic solid-state chemistry, nanomaterials, biomaterials, thin films and polymers, and composite/hybrid materials. The journal particularly seeks papers that highlight the creation or development of innovative materials with novel optical, electrical, magnetic, catalytic, or mechanical properties. It is essential that manuscripts on these topics have a primary focus on the chemistry of materials and represent a significant advancement compared to prior research. Before external reviews are sought, submitted manuscripts undergo a review process by a minimum of two editors to ensure their appropriateness for the journal and the presence of sufficient evidence of a significant advance that will be of broad interest to the materials chemistry community.