{"title":"尖晶石CuFe₂O₄纳米结构在器件应用中的光子和光电子特性","authors":"Aysegul Dere, Mesut Yalcin, Shehab Mansour, Fahrettin Yakuphanoglu","doi":"10.1007/s11082-025-08384-w","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, a photodiode with an Al/p-Si/CuFe₂O₄/Al structure was fabricated using synthesized CuFe₂O₄ nanoparticles, and its electrical properties were systematically investigated. The current-voltage (I-V) characteristics were measured in the voltage range from − 7 V to + 7 V at different light intensities and showed a significant increase in current upon illumination. The ideality factor (n) and barrier height (Φ<sub>b</sub>) were calculated under both dark and illuminated conditions. The n value was 2.193 in the dark and ranged from 2.192 to 2.343 under illumination. The Φ<sub>b</sub> values varied slightly with light intensity, reaching a maximum of 1.90 eV. In addition, the responsivity (R) and detectivity (D<sup>*</sup>) of the device at a light intensity of 10 mW/cm² were calculated to be 61,664 mA/W and 3.89 × 10¹² Jones, respectively. These results show the high potential of the Al/p-Si/CuFe₂O₄/Al photodiode for use in photovoltaic and photodetector applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 8","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photonic and optoelectronic properties of spinel CuFe₂O₄ nanostructures for device applications\",\"authors\":\"Aysegul Dere, Mesut Yalcin, Shehab Mansour, Fahrettin Yakuphanoglu\",\"doi\":\"10.1007/s11082-025-08384-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, a photodiode with an Al/p-Si/CuFe₂O₄/Al structure was fabricated using synthesized CuFe₂O₄ nanoparticles, and its electrical properties were systematically investigated. The current-voltage (I-V) characteristics were measured in the voltage range from − 7 V to + 7 V at different light intensities and showed a significant increase in current upon illumination. The ideality factor (n) and barrier height (Φ<sub>b</sub>) were calculated under both dark and illuminated conditions. The n value was 2.193 in the dark and ranged from 2.192 to 2.343 under illumination. The Φ<sub>b</sub> values varied slightly with light intensity, reaching a maximum of 1.90 eV. In addition, the responsivity (R) and detectivity (D<sup>*</sup>) of the device at a light intensity of 10 mW/cm² were calculated to be 61,664 mA/W and 3.89 × 10¹² Jones, respectively. These results show the high potential of the Al/p-Si/CuFe₂O₄/Al photodiode for use in photovoltaic and photodetector applications.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"57 8\",\"pages\":\"\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2025-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-025-08384-w\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08384-w","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Photonic and optoelectronic properties of spinel CuFe₂O₄ nanostructures for device applications
In this study, a photodiode with an Al/p-Si/CuFe₂O₄/Al structure was fabricated using synthesized CuFe₂O₄ nanoparticles, and its electrical properties were systematically investigated. The current-voltage (I-V) characteristics were measured in the voltage range from − 7 V to + 7 V at different light intensities and showed a significant increase in current upon illumination. The ideality factor (n) and barrier height (Φb) were calculated under both dark and illuminated conditions. The n value was 2.193 in the dark and ranged from 2.192 to 2.343 under illumination. The Φb values varied slightly with light intensity, reaching a maximum of 1.90 eV. In addition, the responsivity (R) and detectivity (D*) of the device at a light intensity of 10 mW/cm² were calculated to be 61,664 mA/W and 3.89 × 10¹² Jones, respectively. These results show the high potential of the Al/p-Si/CuFe₂O₄/Al photodiode for use in photovoltaic and photodetector applications.
期刊介绍：
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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