碳纳米管在流化床反应器中的生长动力学:Langmuir-Hinshelwood方法

IF 3.9 3区 工程技术 Q2 ENGINEERING, CHEMICAL
Sangsoo Shin, Tae Hoon Seo and Jaegeun Lee*, 
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引用次数: 0

摘要

利用流化床反应器(FBR)经济批量生产碳纳米管(CNTs),反应器设计至关重要。在这里,我们使用Langmuir-Hinshelwood (L-H)方法确定了FBR中碳纳米管合成的速率定律和限速步骤。为了确定CNTs的初始生长速率,我们绘制了生长曲线,并决定收集2 min生长期的初始生长速率数据。然后我们得到了碳纳米管在不同C2H4分压下的初始生长速率。通过建立吸附、表面反应和碳纳米管生长的速率规律,并将其与初始生长速率数据进行比较,得出表面反应是限速步骤的结论。速率规律为rS = kS·PC2H4/1 + KA·PC2H4。此外,我们通过使用Thiele模量测试了L-H方法基本假设的有效性,该假设表明反应速率远低于扩散速率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Growth Kinetics of Carbon Nanotubes in a Fluidized Bed Reactor: A Langmuir–Hinshelwood Approach

Growth Kinetics of Carbon Nanotubes in a Fluidized Bed Reactor: A Langmuir–Hinshelwood Approach

For the economical mass production of carbon nanotubes (CNTs) using a fluidized bed reactor (FBR), reactor design is essential. Here, we identified the rate law and the rate-limiting step for CNT synthesis in an FBR using the Langmuir–Hinshelwood (L–H) approach. To determine initial growth rate of CNTs, we plotted growth curves and decided to gather the initial growth rate data from 2 min growth periods. We then obtained the initial growth rate of CNT at various partial pressure of C2H4. By formulating rate laws for adsorption, surface reaction, and CNT growth, and comparing them with the initial growth rate data, we concluded that the surface reaction is the rate-limiting step. The rate law was determined to be rS = kS·PC2H4/1 + KA·PC2H4. Additionally, we tested the validity of the underlying assumption of the L-H approach by employing Thiele modulus, which suggested that the reaction rate is much slower than the diffusion rate.

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来源期刊
Industrial & Engineering Chemistry Research
Industrial & Engineering Chemistry Research 工程技术-工程:化工
CiteScore
7.40
自引率
7.10%
发文量
1467
审稿时长
2.8 months
期刊介绍: ndustrial & Engineering Chemistry, with variations in title and format, has been published since 1909 by the American Chemical Society. Industrial & Engineering Chemistry Research is a weekly publication that reports industrial and academic research in the broad fields of applied chemistry and chemical engineering with special focus on fundamentals, processes, and products.
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