Min Gi Son, Jong Hak Lee, Young Min Park, Seon Yeon Choi, Sung Jin An* and Hyun Ho Kim*,
{"title":"APCVD前驱体真空预退火提高单层过渡金属二硫族化合物的质量","authors":"Min Gi Son, Jong Hak Lee, Young Min Park, Seon Yeon Choi, Sung Jin An* and Hyun Ho Kim*, ","doi":"10.1021/acs.cgd.5c00208","DOIUrl":null,"url":null,"abstract":"<p >Two-dimensional transition-metal dichalcogenides (TMDCs) have garnered significant interest due to their exceptional physical and chemical properties. Among various fabrication techniques, atmospheric pressure chemical vapor deposition (APCVD) is widely used for its ability to produce high-crystallinity films with precise process control. However, in the APCVD process, oxidative impurities such as moisture and oxygen are not effectively removed, as gaseous contaminants are only gradually expelled through diffusion. To mitigate this issue, a vacuum preannealing process was implemented to eliminate moisture adsorbed on the precursor. Fourier-transform infrared (FT-IR) and Raman spectroscopy confirmed the effective removal of physically and chemically adsorbed moisture at 400 °C. The improved quality of the synthesized tungsten diselenide (WSe<sub>2</sub>) was further validated through Raman and photoluminescence (PL) spectroscopy. Moreover, field-effect transistors (FETs) fabricated with WSe<sub>2</sub> exhibited enhanced electrical performance, achieving a mobility of 27.5 cm<sup>2</sup>/V·s and an on/off ratio of 3 × 10<sup>6</sup>. These findings demonstrate an effective strategy to optimize the APCVD process and enhance the TMDC-based device performance.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":"25 14","pages":"5241–5246"},"PeriodicalIF":3.4000,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Vacuum Preannealing of Precursors in APCVD for Enhanced Quality of Monolayer Transition-Metal Dichalcogenides\",\"authors\":\"Min Gi Son, Jong Hak Lee, Young Min Park, Seon Yeon Choi, Sung Jin An* and Hyun Ho Kim*, \",\"doi\":\"10.1021/acs.cgd.5c00208\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Two-dimensional transition-metal dichalcogenides (TMDCs) have garnered significant interest due to their exceptional physical and chemical properties. Among various fabrication techniques, atmospheric pressure chemical vapor deposition (APCVD) is widely used for its ability to produce high-crystallinity films with precise process control. However, in the APCVD process, oxidative impurities such as moisture and oxygen are not effectively removed, as gaseous contaminants are only gradually expelled through diffusion. To mitigate this issue, a vacuum preannealing process was implemented to eliminate moisture adsorbed on the precursor. Fourier-transform infrared (FT-IR) and Raman spectroscopy confirmed the effective removal of physically and chemically adsorbed moisture at 400 °C. The improved quality of the synthesized tungsten diselenide (WSe<sub>2</sub>) was further validated through Raman and photoluminescence (PL) spectroscopy. Moreover, field-effect transistors (FETs) fabricated with WSe<sub>2</sub> exhibited enhanced electrical performance, achieving a mobility of 27.5 cm<sup>2</sup>/V·s and an on/off ratio of 3 × 10<sup>6</sup>. These findings demonstrate an effective strategy to optimize the APCVD process and enhance the TMDC-based device performance.</p>\",\"PeriodicalId\":34,\"journal\":{\"name\":\"Crystal Growth & Design\",\"volume\":\"25 14\",\"pages\":\"5241–5246\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystal Growth & Design\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.cgd.5c00208\",\"RegionNum\":2,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Growth & Design","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.cgd.5c00208","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Vacuum Preannealing of Precursors in APCVD for Enhanced Quality of Monolayer Transition-Metal Dichalcogenides
Two-dimensional transition-metal dichalcogenides (TMDCs) have garnered significant interest due to their exceptional physical and chemical properties. Among various fabrication techniques, atmospheric pressure chemical vapor deposition (APCVD) is widely used for its ability to produce high-crystallinity films with precise process control. However, in the APCVD process, oxidative impurities such as moisture and oxygen are not effectively removed, as gaseous contaminants are only gradually expelled through diffusion. To mitigate this issue, a vacuum preannealing process was implemented to eliminate moisture adsorbed on the precursor. Fourier-transform infrared (FT-IR) and Raman spectroscopy confirmed the effective removal of physically and chemically adsorbed moisture at 400 °C. The improved quality of the synthesized tungsten diselenide (WSe2) was further validated through Raman and photoluminescence (PL) spectroscopy. Moreover, field-effect transistors (FETs) fabricated with WSe2 exhibited enhanced electrical performance, achieving a mobility of 27.5 cm2/V·s and an on/off ratio of 3 × 106. These findings demonstrate an effective strategy to optimize the APCVD process and enhance the TMDC-based device performance.
期刊介绍：
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.
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