退火温度对ZnO薄膜结构和光学性能的影响

IF 3.9 2区综合性期刊 Q1 MULTIDISCIPLINARY SCIENCES

Scientific Reports Pub Date : 2025-08-07 DOI:10.1038/s41598-025-02177-7

Rajkumar C, Arunachalam Arulraj

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引用次数: 0

摘要

氧化锌（ZnO）具有宽带隙（3.37 eV）、高电子迁移率和显著的激子结合能（60 meV）等优点，是一种广泛应用于光电器件的多用途材料。在本研究中，通过热蒸发在SiO₂/Si衬底上制备ZnO薄膜，然后在400°C和600°C下退火，研究热处理对其结构、光学和光导性能的影响。x射线衍射（XRD）分析证实了六方纤锌矿ZnO结构的形成，在较高的退火温度下观察到结晶度的改善。薄膜的光电导率表现出增强的响应时间和自供电行为，特别是在600°C退火的样品中。这些发现突出了ZnO薄膜在快速响应光探测应用中的潜力，并表明受控退火显著影响光敏性。

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Enhanced photoconductive response of ZnO thin films with the impact of annealing temperatures on structural and optical properties.

Zinc oxide (ZnO) is a versatile material widely used in optoelectronic devices due to its broad bandgap (3.37 eV), high electron mobility, and significant exciton binding energy (60 meV). In this study, ZnO thin films were fabricated on SiO₂/Si substrates via thermal evaporation, followed by annealing at 400 °C and 600 °C to investigate the effect of thermal treatment on their structural, optical, and photoconductive properties. X-ray diffraction (XRD) analysis confirmed the formation of the hexagonal wurtzite ZnO structure, with improved crystallinity observed at higher annealing temperatures. The photoconductivity of the films demonstrated enhanced response times and self-powered behavior, particularly in the sample annealed at 600 °C. These findings highlight the potential of ZnO thin films for fast-response photodetection applications and show that controlled annealing significantly influences photosensitivity.

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来源期刊

Scientific Reports Natural Science Disciplines-

CiteScore

7.50

自引率

4.30%

发文量

19567

审稿时长

3.9 months

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