{"title":"空位有序Cs2TiBr6忆阻器:实现超快速开关和高效图像处理","authors":"Zheng Rong , Siqi Zhang , Liang Chu","doi":"10.1016/j.matt.2025.102288","DOIUrl":null,"url":null,"abstract":"<div><div>Memristors have shown promise as hardware for emerging neuromorphic memory-in-computing applications, but their practical implementation is hindered by random conductive filament (CF) growth from disordered vacancy defects. In recent work published in <em>Matter</em>, an ultrafast-switching memristor was developed based on vacancy-ordered double perovskite Cs<sub>2</sub>TiBr<sub>6</sub> nanocrystals, achieving switching times of 28 and 54 ns for SET and RESET processes, respectively. The ordered vacancy structure enables predictable CF formation/rupture, which suppresses ion migration randomness. An 8 × 8 crossbar array of these memristors demonstrates 10% improved recognition accuracy for denoised images, showcasing their potential in real-time visual information processing.</div></div>","PeriodicalId":388,"journal":{"name":"Matter","volume":"8 8","pages":"Article 102288"},"PeriodicalIF":17.5000,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Vacancy-ordered Cs2TiBr6 memristors: Enabling ultrafast switching and efficient image processing\",\"authors\":\"Zheng Rong , Siqi Zhang , Liang Chu\",\"doi\":\"10.1016/j.matt.2025.102288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Memristors have shown promise as hardware for emerging neuromorphic memory-in-computing applications, but their practical implementation is hindered by random conductive filament (CF) growth from disordered vacancy defects. In recent work published in <em>Matter</em>, an ultrafast-switching memristor was developed based on vacancy-ordered double perovskite Cs<sub>2</sub>TiBr<sub>6</sub> nanocrystals, achieving switching times of 28 and 54 ns for SET and RESET processes, respectively. The ordered vacancy structure enables predictable CF formation/rupture, which suppresses ion migration randomness. An 8 × 8 crossbar array of these memristors demonstrates 10% improved recognition accuracy for denoised images, showcasing their potential in real-time visual information processing.</div></div>\",\"PeriodicalId\":388,\"journal\":{\"name\":\"Matter\",\"volume\":\"8 8\",\"pages\":\"Article 102288\"},\"PeriodicalIF\":17.5000,\"publicationDate\":\"2025-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Matter\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2590238525003315\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Matter","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590238525003315","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Vacancy-ordered Cs2TiBr6 memristors: Enabling ultrafast switching and efficient image processing
Memristors have shown promise as hardware for emerging neuromorphic memory-in-computing applications, but their practical implementation is hindered by random conductive filament (CF) growth from disordered vacancy defects. In recent work published in Matter, an ultrafast-switching memristor was developed based on vacancy-ordered double perovskite Cs2TiBr6 nanocrystals, achieving switching times of 28 and 54 ns for SET and RESET processes, respectively. The ordered vacancy structure enables predictable CF formation/rupture, which suppresses ion migration randomness. An 8 × 8 crossbar array of these memristors demonstrates 10% improved recognition accuracy for denoised images, showcasing their potential in real-time visual information processing.
期刊介绍:
Matter, a monthly journal affiliated with Cell, spans the broad field of materials science from nano to macro levels,covering fundamentals to applications. Embracing groundbreaking technologies,it includes full-length research articles,reviews, perspectives,previews, opinions, personnel stories, and general editorial content.
Matter aims to be the primary resource for researchers in academia and industry, inspiring the next generation of materials scientists.